Nanometric SiC powder was prepared by chemical vapor deposition at 1100°C,and samples were subsequently treated by rapid thermal annealing at 600-1100°C.The intensities of the blue photoluminescence were the...Nanometric SiC powder was prepared by chemical vapor deposition at 1100°C,and samples were subsequently treated by rapid thermal annealing at 600-1100°C.The intensities of the blue photoluminescence were then measured a t room temperature.The peak intensity at 2.56 eV(484 nm)rises with annealing temperature,reaching a value about 9.2 times as high at 800°C,then drops very quickly at 900°C.Based on the results of x-ray diffraction,infrared spectroscopy,x-ray photoelectron spectroscopy and transmission electron microscopy,we conclude that the amounts of the twofold coordinated Si on the surface of the nanometric SiC particles play an important role in the photoluminescence intensity.展开更多
Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nan...Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nanometer silicon films, because the porous silicon of loosened structure is found difficult to be used in optoelectronic function. A blue/green photoluminescence has been observed from Si thin film with nanostructures prepared by α-Si: H after rapid thermal annealing (RTA) treatments by Zhu et al. But evolution of the hydrogen from as-deposited α-Si:H film by RTA tends to break the thin films into pieces easily.展开更多
基金Foundation of the Graduate School,University of Science and Technology of China at Beijing。
文摘Nanometric SiC powder was prepared by chemical vapor deposition at 1100°C,and samples were subsequently treated by rapid thermal annealing at 600-1100°C.The intensities of the blue photoluminescence were then measured a t room temperature.The peak intensity at 2.56 eV(484 nm)rises with annealing temperature,reaching a value about 9.2 times as high at 800°C,then drops very quickly at 900°C.Based on the results of x-ray diffraction,infrared spectroscopy,x-ray photoelectron spectroscopy and transmission electron microscopy,we conclude that the amounts of the twofold coordinated Si on the surface of the nanometric SiC particles play an important role in the photoluminescence intensity.
文摘Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nanometer silicon films, because the porous silicon of loosened structure is found difficult to be used in optoelectronic function. A blue/green photoluminescence has been observed from Si thin film with nanostructures prepared by α-Si: H after rapid thermal annealing (RTA) treatments by Zhu et al. But evolution of the hydrogen from as-deposited α-Si:H film by RTA tends to break the thin films into pieces easily.
