Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition （PLD） under the same conditions have been studied. Of them, one group is of CeO2 films, which...Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition （PLD） under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel （SS） tapes coated by IBAD-YSZ （IBAD-YSZ/SS）, and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density （Jc） of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50 nm. The surface morphologies of the two groups of samples are examined by SEM.展开更多
One of the most important application of biaxially textured layers on polycrystalline metallic substrates is served as buffer layers for the deposition of biaxially aligned high temperature superconducting tapes. An ...One of the most important application of biaxially textured layers on polycrystalline metallic substrates is served as buffer layers for the deposition of biaxially aligned high temperature superconducting tapes. An evident disadvantage of IBAD is the need for a separate ion source which is expensive and complicative. Instead of this technique, the YSZ buffer layers on polycrystalline metal tape with c axis texture and partial in plane texture were deposited by using a modified bias sputtering technique. And the effect of the deposition condition on the films texture has been studied.展开更多
Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that t...Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.展开更多
Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The ...Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The X-ray 2θ-θ diffraction, ω scan, Φ scan and electron channelling pattern (ECP) shown that thefilms liave high lattice perfection. The relation of growth conditions and film structure was also studied. Thespudering gas presure and subetrate temperature are the most important parameters preparing fer high qualitybeO_2 films.展开更多
The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-os...The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved展开更多
Large area YBCO superconductive films prepared by d.c. magnetron sputtering have reached: T c>89 K, J c>3.5×10 6 A/cm 2 (77 K, 0 T), R s=0.25 mΩ, at 77.5 K, 9894 MHz. The microstructure an...Large area YBCO superconductive films prepared by d.c. magnetron sputtering have reached: T c>89 K, J c>3.5×10 6 A/cm 2 (77 K, 0 T), R s=0.25 mΩ, at 77.5 K, 9894 MHz. The microstructure analysis of the film showed it has fine monocrystalline structure and the crystalline perfectness is satisfactory. The oscillator, filter and antenna made from these films are good in performance. Therefore, YBCO superconductive films have great prospect in application.展开更多
Microstructures of YBa_2Cu_3O_(7-y)(YBCO) film on flexible metal substrate with yttriastabilized zirconia(YSZ) buffer layer prepared by magnetron sputtering technique have been studied in this paper using transmission...Microstructures of YBa_2Cu_3O_(7-y)(YBCO) film on flexible metal substrate with yttriastabilized zirconia(YSZ) buffer layer prepared by magnetron sputtering technique have been studied in this paper using transmission electron microscopy(TEM). A critical temperature(Tc) and a critical current density(Jc) of the YBCO film are 91 K and 2×103 A/cm2 at 77 K, 0 T respectively. Bonded steadfastly to the substrate of nickel alloy(HastelloyC), the dense, even and textured YSZ layer with fine crystal grains is about 12 μm thick. With an uneven thickness of about 500 nm, the YBCO layer is sometimes weakbonded to the YSZ layer. Impurities which occasionally led to cracks were observed at the YSZ/YBCO interface.展开更多
文摘Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition （PLD） under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel （SS） tapes coated by IBAD-YSZ （IBAD-YSZ/SS）, and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density （Jc） of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50 nm. The surface morphologies of the two groups of samples are examined by SEM.
文摘One of the most important application of biaxially textured layers on polycrystalline metallic substrates is served as buffer layers for the deposition of biaxially aligned high temperature superconducting tapes. An evident disadvantage of IBAD is the need for a separate ion source which is expensive and complicative. Instead of this technique, the YSZ buffer layers on polycrystalline metal tape with c axis texture and partial in plane texture were deposited by using a modified bias sputtering technique. And the effect of the deposition condition on the films texture has been studied.
文摘Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.
文摘Epitaxiai CeO_2 thin films have ben grown on in situ (1102) sapphire subetrate by planar target rf mag-netron sputtering methed. The CeO_2 thin films have perfect (002) orientation with CeO_2(001)∥Al_2O_3(1102). The X-ray 2θ-θ diffraction, ω scan, Φ scan and electron channelling pattern (ECP) shown that thefilms liave high lattice perfection. The relation of growth conditions and film structure was also studied. Thespudering gas presure and subetrate temperature are the most important parameters preparing fer high qualitybeO_2 films.
文摘The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved
文摘Large area YBCO superconductive films prepared by d.c. magnetron sputtering have reached: T c>89 K, J c>3.5×10 6 A/cm 2 (77 K, 0 T), R s=0.25 mΩ, at 77.5 K, 9894 MHz. The microstructure analysis of the film showed it has fine monocrystalline structure and the crystalline perfectness is satisfactory. The oscillator, filter and antenna made from these films are good in performance. Therefore, YBCO superconductive films have great prospect in application.
文摘Microstructures of YBa_2Cu_3O_(7-y)(YBCO) film on flexible metal substrate with yttriastabilized zirconia(YSZ) buffer layer prepared by magnetron sputtering technique have been studied in this paper using transmission electron microscopy(TEM). A critical temperature(Tc) and a critical current density(Jc) of the YBCO film are 91 K and 2×103 A/cm2 at 77 K, 0 T respectively. Bonded steadfastly to the substrate of nickel alloy(HastelloyC), the dense, even and textured YSZ layer with fine crystal grains is about 12 μm thick. With an uneven thickness of about 500 nm, the YBCO layer is sometimes weakbonded to the YSZ layer. Impurities which occasionally led to cracks were observed at the YSZ/YBCO interface.
