We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also ...We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature (330℃) is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along ( 111〉 B direction are always dominated despite the variation of GaAs substrate orientations.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 091021015 and 61376015, the Key Basic Research Programs of Shanghai under Grant No 13JC1405900, and the Australian Research Council.
文摘We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature (330℃) is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along ( 111〉 B direction are always dominated despite the variation of GaAs substrate orientations.