Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 ...Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5× 10^15 ions/cm2 are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.展开更多
The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV er...The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM＇98 （Transport of Ions in Matter） and SRIM2006 （Stopping and Range of Ions in Matter） codes.展开更多
The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a ...The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.展开更多
基金Project supported by the Shandong Jianzhu University Foundation,China(Grant No. XN070109)the National Natural Science Foundation of China (Grant No.51042002)
文摘Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5× 10^15 ions/cm2 are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10975094 and 10735070)the National Basic Research Program of China (Grant No. 2010CB832906)+1 种基金Program for New Century Excellent Talents in University,Ministry of Education of China (Grant No. NCET-07-0516)the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 10422-2007B1)
文摘The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM＇98 （Transport of Ions in Matter） and SRIM2006 （Stopping and Range of Ions in Matter） codes.
基金Project supported by the Natural Science Foundation of Shandong Province,China (Grant Nos. ZR2011AM011 andZR2009FM031)the National Natural Science Foundation of China (Grant No. 11005070)the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department,China (Grant No. 2011YK033)
文摘The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.
