Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing...Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing of narrowband amplified spontaneous emission (ASE) spectra is presented. The results show the carrier times are 50.2, 44.6, and 23.6 ps when the injected currents are 120, 180, and 240 mA, respectively, which are in agreement with the nominal values of the sample.展开更多
基金Supported by the National High-Tech Research and Development Program of China under Grant No 2006AA03Z414, the National Natural Science Foundation of China under Grant No 60877056, and the Science Fund for Distinguished Young Scholars of Hubei Province under Grant No 2006ABB017.
基金Project supported by National High Technology Research and Development Program of China (Grant No. 2006AA03Z414)the National Natural Science Foundation of China (Grant No. 60877056)the Science Fund for Distinguished Young Scholars of Hubei Province of China (Grant No. 2006ABB017)
文摘Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing of narrowband amplified spontaneous emission (ASE) spectra is presented. The results show the carrier times are 50.2, 44.6, and 23.6 ps when the injected currents are 120, 180, and 240 mA, respectively, which are in agreement with the nominal values of the sample.