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基于SBT忆阻器元件的神经突触设计 被引量:1
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作者 孙菊斋 刘文昊 +4 位作者 陆增 孙广杰 窦明龙 窦刚 李玉霞 《中国科技论文》 CAS 北大核心 2019年第3期334-339,共6页
利用SBT(Sr0.95Ba0.05TiO3)忆阻器进行神经突触设计,并分析其模拟的神经突触的性能。首先,采用分周期积累建模的方法对测得的忆阻器电压、电流数据进行建模,得到SBT忆阻器忆导值随时间的变化;其次,将忆导值作为突触权重,拟合到忆阻器普... 利用SBT(Sr0.95Ba0.05TiO3)忆阻器进行神经突触设计,并分析其模拟的神经突触的性能。首先,采用分周期积累建模的方法对测得的忆阻器电压、电流数据进行建模,得到SBT忆阻器忆导值随时间的变化;其次,将忆导值作为突触权重,拟合到忆阻器普遍适用的模型中,更好地描述SBT忆阻突触的记忆及遗忘特性;最后,通过数值仿真实验对SBT忆阻突触的脉冲突触可塑性、长/短时记忆可塑性及"学习经验式"行为进行分析。实验结果表明,SBT忆阻突触具有良好的突触可塑性,能够实现类脑学习、记忆过程。 展开更多
关键词 SBT忆阻器 突触建模 人工神经突触 突触可塑性
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Artificial synaptic behavior of the SBT-memristor
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作者 窦刚 窦明龙 +1 位作者 刘任远 郭梅 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第7期600-604,共5页
The synapse of human brain neurons is not only the transmission channel of information,but also the basic unit of human brain learning and information storing.The artificial synapse is constructed based on the Sr_(0.9... The synapse of human brain neurons is not only the transmission channel of information,but also the basic unit of human brain learning and information storing.The artificial synapse is constructed based on the Sr_(0.97)Ba_(0.03)TiO_(3-x)(SBT)memristor,which realizes the short-term and long-term plasticity of the synapse.The experiential learning and non-associative learning behavior in accordance with human cognitive rules are realized by using the SBT-memristor-based synapse.The process of synaptic habituation and sensitization is analyzed.This study provides insightful guidance for realization of artificial synapse and the development of artificial neural network. 展开更多
关键词 MEMRISTOR artificial synapse synaptic plasticity experiential learning non-associative learning
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An SBT-memristor-based crossbar memory circuit
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作者 郭梅 刘任远 +1 位作者 窦明龙 窦刚 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第6期675-683,共9页
Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest.In this paper, the SPICE model of Sr_(0.95)Ba_(0.05)TiO_(3)(SBT)-memristor was established and the corre... Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest.In this paper, the SPICE model of Sr_(0.95)Ba_(0.05)TiO_(3)(SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4×4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8×8 crossbar multi-value memory circuits to the images memory. 展开更多
关键词 MEMRISTOR MEMORY SPICE CROSSBAR
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Dynamics of the two-SBT-memristor-based chaotic circuit
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作者 郭梅 张萌 +2 位作者 窦明龙 窦刚 李玉霞 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第11期271-282,共12页
A two-SBT-memristor-based chaotic circuit was proposed. The stability of the equilibrium point was studied by theoretical analysis. The close dependence of the circuit dynamic characteristics on its initial conditions... A two-SBT-memristor-based chaotic circuit was proposed. The stability of the equilibrium point was studied by theoretical analysis. The close dependence of the circuit dynamic characteristics on its initial conditions and circuit parameters was investigated by utilizing Lyapunov exponents spectra, bifurcation diagrams, phase diagrams, and Poincaré maps. The analysis showed that the circuit system had complex dynamic behaviors, such as stable points, period, chaos, limit cycles,and so on. In particular, the chaotic circuit produced the multistability phenomenon, such as coexisting attractors and coexisting periods. 展开更多
关键词 MEMRISTOR chaotic circuit MULTISTABILITY coexisting attractors
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