Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structu...Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structural properties are investigated.With an increasing substrate temperature,the Raman crystalline volume fraction increases,but decreases with a further increase.The maximum Raman crystalline volume fraction of the nanocrystalline silicon 61ms is about 74%and also has the highest microstructural factor(R=0.89)at a substrate temperature of 250℃.The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction.The continuous transition of the fi1m structures from columnar to agglomerated is observed at a substrate temperature of 300℃.The optical band gaps of the grown thin 61ms declines(from 1.89 to 1.53 eV)and dark electrical conductivity increases(from about 10-10 to about 10-6 S/cm)with the increasing substrate temperature.展开更多
Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temper...Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model,the phase transition is due to a distinct difference in the probability distribution of the H radicals,which seems to be dependent upon Tfil.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50802037the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041.
文摘Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structural properties are investigated.With an increasing substrate temperature,the Raman crystalline volume fraction increases,but decreases with a further increase.The maximum Raman crystalline volume fraction of the nanocrystalline silicon 61ms is about 74%and also has the highest microstructural factor(R=0.89)at a substrate temperature of 250℃.The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction.The continuous transition of the fi1m structures from columnar to agglomerated is observed at a substrate temperature of 300℃.The optical band gaps of the grown thin 61ms declines(from 1.89 to 1.53 eV)and dark electrical conductivity increases(from about 10-10 to about 10-6 S/cm)with the increasing substrate temperature.
基金Supported by the National Natural Science Foundation of China under Grant No 50802037the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041.
文摘Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model,the phase transition is due to a distinct difference in the probability distribution of the H radicals,which seems to be dependent upon Tfil.
