Surface morphological features and nanostructures generated during SiC graphitization process can significantly affect fabrication of high-quality epitaxial graphene on semiconductor substrates.In this work,we investi...Surface morphological features and nanostructures generated during SiC graphitization process can significantly affect fabrication of high-quality epitaxial graphene on semiconductor substrates.In this work,we investigate the surface morphologies and atomic structures during graphitization process of 4H-SiC(0001) using scanning tunneling microscopy.Our high-magnified scanning-tunneling-microscope images exhibit the appearance and gradual developments of SiC(1 × 1)nanostructures after 1100℃ cleaning treatments,irregularly distributed among carbon nanocaps and(√3×√3) reconstruction domains.A model for the formation and growth progression of SiC(1 × 1) nanostructures has been proposed.When post-annealing temperature reaches 1300 ℃,the nanoholes and nanoislands can be observed on the surface,and multilayer graphene is often detected lying on the top surface of those nanoislands.These results provide profound insights into the complex evolution process of surface morphology during SiC thermal decomposition and will shed light on fabrication of SiC nanostructures and graphene nanoflakes.展开更多
Intercalation of atomic species is a practicable method for epitaxial graphene to adjust the electronic band structure and to tune the coupling between graphene and Si C substrate. In this work, atomically flat epitax...Intercalation of atomic species is a practicable method for epitaxial graphene to adjust the electronic band structure and to tune the coupling between graphene and Si C substrate. In this work, atomically flat epitaxial graphene is prepared on 4H-SiC(0001) using the flash heating method in an ultrahigh vacuum system. Scanning tunneling microscopy, Raman spectroscopy and electrical transport measurements are utilized to investigate surface morphological structures and transport properties of pristine and Er-intercalated epitaxial graphene. It is found that Er atoms are intercalated underneath the graphene layer after annealing at 900℃, and the intercalation sites of Er atoms are located mainly at the bufferlayer/monolayer-graphene interface in monolayer domains. We also report the different behaviors of Er intercalation in monolayer and bilayer regions, and the experimental results show that the diffusion barrier for Er intercalated atoms in the buffer-layer/monolayer interface is at least 0.2 eV higher than that in the first/second graphene-layer interface. The appearance of Er atoms is found to have distinct impacts on the electronic transports of epitaxial graphene on SiC(0001).展开更多
基金Project supported by the Natural Science Foundation of Shanghai Science and Technology Committee (Grant No. 18ZR1403300)。
文摘Surface morphological features and nanostructures generated during SiC graphitization process can significantly affect fabrication of high-quality epitaxial graphene on semiconductor substrates.In this work,we investigate the surface morphologies and atomic structures during graphitization process of 4H-SiC(0001) using scanning tunneling microscopy.Our high-magnified scanning-tunneling-microscope images exhibit the appearance and gradual developments of SiC(1 × 1)nanostructures after 1100℃ cleaning treatments,irregularly distributed among carbon nanocaps and(√3×√3) reconstruction domains.A model for the formation and growth progression of SiC(1 × 1) nanostructures has been proposed.When post-annealing temperature reaches 1300 ℃,the nanoholes and nanoislands can be observed on the surface,and multilayer graphene is often detected lying on the top surface of those nanoislands.These results provide profound insights into the complex evolution process of surface morphology during SiC thermal decomposition and will shed light on fabrication of SiC nanostructures and graphene nanoflakes.
基金Project supported by the Natural Science Foundation of Shanghai Science and Technology Committee (Grant No. 18ZR1403300)。
文摘Intercalation of atomic species is a practicable method for epitaxial graphene to adjust the electronic band structure and to tune the coupling between graphene and Si C substrate. In this work, atomically flat epitaxial graphene is prepared on 4H-SiC(0001) using the flash heating method in an ultrahigh vacuum system. Scanning tunneling microscopy, Raman spectroscopy and electrical transport measurements are utilized to investigate surface morphological structures and transport properties of pristine and Er-intercalated epitaxial graphene. It is found that Er atoms are intercalated underneath the graphene layer after annealing at 900℃, and the intercalation sites of Er atoms are located mainly at the bufferlayer/monolayer-graphene interface in monolayer domains. We also report the different behaviors of Er intercalation in monolayer and bilayer regions, and the experimental results show that the diffusion barrier for Er intercalated atoms in the buffer-layer/monolayer interface is at least 0.2 eV higher than that in the first/second graphene-layer interface. The appearance of Er atoms is found to have distinct impacts on the electronic transports of epitaxial graphene on SiC(0001).
