The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feas...The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feasible explanation are presented.展开更多
The thermal diffusivities of new PbB4O7, crystal determined by the optical beam deflection (OBD) technique at room temperature are provided. The experimental results indicate that the thermal diffusivities of this cry...The thermal diffusivities of new PbB4O7, crystal determined by the optical beam deflection (OBD) technique at room temperature are provided. The experimental results indicate that the thermal diffusivities of this crystal in the orientations of the three main axes are anisotropic; there is an elliptical distribution of the thermal diffusivities versus the detecting angle in the X-Z plane for the 0° Y-cut plate. This result agrees with the theoretical estimation.展开更多
基金supported by the Science Fund of the Chinese Academy of Sciences。
文摘The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feasible explanation are presented.
文摘The thermal diffusivities of new PbB4O7, crystal determined by the optical beam deflection (OBD) technique at room temperature are provided. The experimental results indicate that the thermal diffusivities of this crystal in the orientations of the three main axes are anisotropic; there is an elliptical distribution of the thermal diffusivities versus the detecting angle in the X-Z plane for the 0° Y-cut plate. This result agrees with the theoretical estimation.