Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole c...Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.展开更多
We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （T...We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （TPBI）. The device structure is ITO/ NPB/ TPBI：CuPcF16/BCP/Alq3/Al. Room-temperature electro- luminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state （T1-S0） of CuPcF16. The result indicates that FSrster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPeF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60576054, 50532080 and 60676040, and the Innovation Foundation of Jilin University.
文摘Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.
基金supported by the Doctoral Foundation of Dalian University of Technology (No.3005-893327)the National Natural Science Foundation of China (No.60807009)the Young Teacher Foundation of Dalian University of Technology (No.3005-893212)
文摘We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （TPBI）. The device structure is ITO/ NPB/ TPBI：CuPcF16/BCP/Alq3/Al. Room-temperature electro- luminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state （T1-S0） of CuPcF16. The result indicates that FSrster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPeF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.
