This paper proposes a novel miniature dual-functional sensor integrating both pressure and temperature sensitive units on a single chip.The device wafer of SOI is used as a pizeoresistive diaphragm which features exce...This paper proposes a novel miniature dual-functional sensor integrating both pressure and temperature sensitive units on a single chip.The device wafer of SOI is used as a pizeoresistive diaphragm which features excellent consistency in thickness.The conventional anisotropic wet etching has been abandoned,while ICP etching has been employed to etch out the reference cave to minimize the area of individual device in the way that the 57.4°slope has been eliminated.As a result,the average cost of the single chip is reduced.Two PN junctions with constant ratio of the areas of depletion regions have also been integrated on the same chip to serve as a temperature sensor,and each PN junction shows high linearity over -40 to 100℃and low power consumption.The iron implanting process for PN junction is exactly compatible with the piezoresistor,with no additional expenditure.The pressure sensitivity is 86 mV/MPa,while temperature sensitivity is 1.43 mV/℃,both complying with the design objective.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2006AA04Z372).
文摘This paper proposes a novel miniature dual-functional sensor integrating both pressure and temperature sensitive units on a single chip.The device wafer of SOI is used as a pizeoresistive diaphragm which features excellent consistency in thickness.The conventional anisotropic wet etching has been abandoned,while ICP etching has been employed to etch out the reference cave to minimize the area of individual device in the way that the 57.4°slope has been eliminated.As a result,the average cost of the single chip is reduced.Two PN junctions with constant ratio of the areas of depletion regions have also been integrated on the same chip to serve as a temperature sensor,and each PN junction shows high linearity over -40 to 100℃and low power consumption.The iron implanting process for PN junction is exactly compatible with the piezoresistor,with no additional expenditure.The pressure sensitivity is 86 mV/MPa,while temperature sensitivity is 1.43 mV/℃,both complying with the design objective.
