We find extremely large low-magnetic-field magnetoresistance （~350% at 0.2 T and ~180% at 0.1 T） in germa- nium at room temperature and the magnetoresistanee is highly sensitive to the surface roughness. This unique...We find extremely large low-magnetic-field magnetoresistance （~350% at 0.2 T and ~180% at 0.1 T） in germa- nium at room temperature and the magnetoresistanee is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic in- cluding AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.展开更多
As the family of magnetic materials is rapidly growing,two-dimensional(2D)van der Waals(vdW)magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their pot...As the family of magnetic materials is rapidly growing,two-dimensional(2D)van der Waals(vdW)magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications.This paper reviews the recent progress on emergent vd W magnetic compounds and their potential applications in devices.First,we summarize the current vd W magnetic materials and their synthetic methods.Then,we focus on their structure and the modulation of magnetic properties by analyzing the representative vd W magnetic materials with different magnetic structures.In addition,we pay attention to the heterostructures of vd W magnetic materials,which are expected to produce revolutionary applications of magnetism-related devices.To motivate the researchers in this area,we finally provide the challenges and outlook on 2D vd W magnetism.展开更多
We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resis...We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10^3 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174169,11234007 and 51471093
文摘We find extremely large low-magnetic-field magnetoresistance （~350% at 0.2 T and ~180% at 0.1 T） in germa- nium at room temperature and the magnetoresistanee is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic in- cluding AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.
基金funding support of the National Natural Science Foundation of China(Grant Nos.11975035,51731001,11805006,and 11675006)the National Key Research and Development Program of China(Grant Nos.2017YFA0206303 and 2017YFA0403701)。
文摘As the family of magnetic materials is rapidly growing,two-dimensional(2D)van der Waals(vdW)magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications.This paper reviews the recent progress on emergent vd W magnetic compounds and their potential applications in devices.First,we summarize the current vd W magnetic materials and their synthetic methods.Then,we focus on their structure and the modulation of magnetic properties by analyzing the representative vd W magnetic materials with different magnetic structures.In addition,we pay attention to the heterostructures of vd W magnetic materials,which are expected to produce revolutionary applications of magnetism-related devices.To motivate the researchers in this area,we finally provide the challenges and outlook on 2D vd W magnetism.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174169 and 11234007. This work made use of the resources of the Beijing National Center for Electron Microscopy.
文摘We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10^3 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
