This study explores a strategy of using the phosphonic acid derivative （11-（（12-（anthracen-2- yl）dodecyl）oxy）-11-oxoundecyl） phosphonic acid （ADO-phosphonic acid） as self-assembled monolayers （SAMs） on a S...This study explores a strategy of using the phosphonic acid derivative （11-（（12-（anthracen-2- yl）dodecyl）oxy）-11-oxoundecyl） phosphonic acid （ADO-phosphonic acid） as self-assembled monolayers （SAMs） on a Si/SiO2 surface to induce the crystallization ofrubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2/（V.s）. It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology ofrubrene to form a crystalline film in the thin-film transistors.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61106002)the Natural Science Foundation Project of CQCSTC(No.2011BB4083)the Fundamental Research Funds for the Central Universities(Nos.CDJZR13225502,CQDXWL-2012-030,CDJRC10220007)
文摘This study explores a strategy of using the phosphonic acid derivative （11-（（12-（anthracen-2- yl）dodecyl）oxy）-11-oxoundecyl） phosphonic acid （ADO-phosphonic acid） as self-assembled monolayers （SAMs） on a Si/SiO2 surface to induce the crystallization ofrubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2/（V.s）. It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology ofrubrene to form a crystalline film in the thin-film transistors.
