Excited states of lnAs quantum dots （QDs） can be energetically coupled with the confined level of OaAs quantum wells （QWs） in a thin-barrier resonant tunneling diode （RTD）. Single charge variation in the coupled...Excited states of lnAs quantum dots （QDs） can be energetically coupled with the confined level of OaAs quantum wells （QWs） in a thin-barrier resonant tunneling diode （RTD）. Single charge variation in the coupled QD can effectively switch on/off the resonant tunneling current passing through RTD, not only for emcient single-photon detection but also for photon-number-resolving detection. We present the study of the Q,D-QW coupling effect in the quantum dot coupled resonant tunneling diode （QD-cRTD） and figure out important factors for further improving the detector performance.展开更多
InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior,and a wide bistability(ΔV~0.8 V)is observed in the negative differential resistance region.Based on an analyt...InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior,and a wide bistability(ΔV~0.8 V)is observed in the negative differential resistance region.Based on an analytic model,we attribute the observed distinct bistability of a resonant tunneling diodes with quantum dots to the feedback dependence of energy of the electron-storing quantum dots on the tunneling current density.Meanwhile,we find that this wide bistable region can be modulated sensitively by light illumination and becomes narrower with increasing light intensity.Our results suggest that the present devices can be potentially used as sensitive photodetectors in optoelectronic fields.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2011CB925600the National Natural Science Foundation of China under Grant Nos 11427807,91321311,10990100,11174057 and 61106092the Shanghai Science and Technology Committee under Grant No 14JC1406600
文摘Excited states of lnAs quantum dots （QDs） can be energetically coupled with the confined level of OaAs quantum wells （QWs） in a thin-barrier resonant tunneling diode （RTD）. Single charge variation in the coupled QD can effectively switch on/off the resonant tunneling current passing through RTD, not only for emcient single-photon detection but also for photon-number-resolving detection. We present the study of the Q,D-QW coupling effect in the quantum dot coupled resonant tunneling diode （QD-cRTD） and figure out important factors for further improving the detector performance.
基金the National Basic Research Program of China Grant Nos 2011CB925600/2009CB929300the National Natural Science Foundation of China under Grant No 10990100Shanghai Science and Technology Committee under Contract No 09dj1400100.
文摘InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior,and a wide bistability(ΔV~0.8 V)is observed in the negative differential resistance region.Based on an analytic model,we attribute the observed distinct bistability of a resonant tunneling diodes with quantum dots to the feedback dependence of energy of the electron-storing quantum dots on the tunneling current density.Meanwhile,we find that this wide bistable region can be modulated sensitively by light illumination and becomes narrower with increasing light intensity.Our results suggest that the present devices can be potentially used as sensitive photodetectors in optoelectronic fields.
