A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity len...A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB.展开更多
Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate conf...Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.展开更多
A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by h...A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by holographic photolithography and wet-etching.The laser operates at a single-mode up to 255 mA,corresponding to an output power of 90 mW.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61201103, and the National High-Technology Research and Development Program of China under Grant No 2013AA014202.
文摘A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274046,61335009,61201103,and 61320106013)the National High Technology Research and Development Program of China(Grant No.2013AA014202)
文摘Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61201103in part by the National High-Technology Research and Development Program of China under Grant No 2013AA014202.
文摘A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated.Two low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by holographic photolithography and wet-etching.The laser operates at a single-mode up to 255 mA,corresponding to an output power of 90 mW.
