铜铟镓硒(copper indium gallium di Selenide,CIGS)被公认为最佳的薄膜太阳电池材料之一,CIGS薄膜太阳电池是一种高效的薄膜太阳电池。分析了柔性CIGS薄膜太阳电池的结构、衬底材料的选择、扩散垒的作用、吸收层和缓冲层的制备和特性,...铜铟镓硒(copper indium gallium di Selenide,CIGS)被公认为最佳的薄膜太阳电池材料之一,CIGS薄膜太阳电池是一种高效的薄膜太阳电池。分析了柔性CIGS薄膜太阳电池的结构、衬底材料的选择、扩散垒的作用、吸收层和缓冲层的制备和特性,介绍了不锈钢箔、铝箔聚酰亚胺等柔性衬底CIGS薄膜太阳电池的研发情况,最后展望了柔性CIGS薄膜太阳电池的应用前景。展开更多
Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface pass...Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density(D_(it)) from lifetime measurement is proposed.The interface state density(D_(it)) measurement is also performed by using deep-level transient spectroscopy(DLTS) to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry(SE) and Fourier transform infrared spectroscopy(FTIR) respectively.Lower values of interface state density(D_(it)) are obtained by using a-Si:H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.展开更多
文摘铜铟镓硒(copper indium gallium di Selenide,CIGS)被公认为最佳的薄膜太阳电池材料之一,CIGS薄膜太阳电池是一种高效的薄膜太阳电池。分析了柔性CIGS薄膜太阳电池的结构、衬底材料的选择、扩散垒的作用、吸收层和缓冲层的制备和特性,介绍了不锈钢箔、铝箔聚酰亚胺等柔性衬底CIGS薄膜太阳电池的研发情况,最后展望了柔性CIGS薄膜太阳电池的应用前景。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51361022 and 61574072)the Postdoctoral Science Foundation of Jiangxi Province,China(Grant No.2015KY12)
文摘Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density(D_(it)) from lifetime measurement is proposed.The interface state density(D_(it)) measurement is also performed by using deep-level transient spectroscopy(DLTS) to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry(SE) and Fourier transform infrared spectroscopy(FTIR) respectively.Lower values of interface state density(D_(it)) are obtained by using a-Si:H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.