Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and th...Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 μm, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Thea the SiOs precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nrn with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.展开更多
基金supported by the National Natural Science Foundation of China(No.20471019)the Natural Science Foundation of Anhui Provinces of China(No.050440904).
文摘Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 μm, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Thea the SiOs precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nrn with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.
