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ZnO薄膜结构表征的研究现状
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作者 肖祁陵 徐鹏 张萌 《材料导报》 EI CAS CSCD 北大核心 2005年第F11期300-303,共4页
ZnO薄膜是继CaN材料之后的另一种具有应用前景的直接宽带隙半导体材料。针对目前对ZnO薄膜结构的分析,综述了ZnO薄膜结构表征的常用方法,着重分析了XRD在ZnO薄膜结构方面的应用。
关键词 ZNO薄膜 结构分析 XRD 直接宽带隙半导体材料
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半导体外延层晶格失配度的计算 被引量:9
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作者 何菊生 张萌 肖祁陵 《南昌大学学报(理科版)》 CAS 北大核心 2006年第1期63-67,102,共6页
比较了晶格失配度的各种定义,建议统一使用同一定义。采用简化模型系统地探讨了各种情况下半导体外延生长层和衬底的二维晶格失配度的计算,最后讨论了结合XRD衍射图谱确定失配度的方法。结果表明,正三角形晶格和长方形晶格匹配,长方形... 比较了晶格失配度的各种定义,建议统一使用同一定义。采用简化模型系统地探讨了各种情况下半导体外延生长层和衬底的二维晶格失配度的计算,最后讨论了结合XRD衍射图谱确定失配度的方法。结果表明,正三角形晶格和长方形晶格匹配,长方形晶格的宽列原子的匹配具有优先性,不受长列原子匹配的影响。长方形的长宽比接近匹配比时,整体匹配较好。 展开更多
关键词 晶格失配度 体结构 二维晶格 半导体外延层
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Nd和Gd对Mg-3Al合金的细晶行为及影响机理
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作者 刘权 肖祁陵 +2 位作者 罗群 李谦 周国治 《中国有色金属学报》 EI CAS CSCD 北大核心 2023年第3期653-664,共12页
以Mg-3Al合金为研究对象,基于边-边匹配(E2EM)模型和相图计算,分析Al-X金属间化合物与α-Mg的晶面和原子错配度及其熔点,筛选Mg-Al-X合金中潜在的异质形核物相,探究筛选的Al2Nd和Al2Gd对Mg-3Al合金晶粒尺寸的影响,分析Nd和Gd对Mg-3Al合... 以Mg-3Al合金为研究对象,基于边-边匹配(E2EM)模型和相图计算,分析Al-X金属间化合物与α-Mg的晶面和原子错配度及其熔点,筛选Mg-Al-X合金中潜在的异质形核物相,探究筛选的Al2Nd和Al2Gd对Mg-3Al合金晶粒尺寸的影响,分析Nd和Gd对Mg-3Al合金物相组成和显微组织的影响,揭示Nd和Gd对Mg-3Al合金的细晶机理。结果表明:添加适量Nd和Gd元素可以有效减小Mg-3Al合金晶粒尺寸,提升合金屈服强度。当分别添加3%Nd、3%Gd(质量分数)后,Mg-3Al合金晶粒尺寸由(145±9)μm分别减小至(81±5)μm、(76±4)μm,分别降低了44%、48%,合金屈服强度由65 MPa提升至76~79 MPa,伸长率可达12.7%~16.5%。其细晶机理为Al2RE(Nd,Gd)颗粒作为α-Mg晶粒的异质形核质点细化晶粒。 展开更多
关键词 Mg-3Al合金 稀土元素 晶粒细化 细晶机理
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Flux pinning evolution in multilayer Pb/Ge/Pb/Ge/Pb superconducting systems
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作者 高礼鑫 张晓珂 +3 位作者 张安蕾 肖祁陵 陈飞 葛军饴 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第3期491-496,共6页
Multicomponent superconductors exhibit nontrivial vortex behaviors due to the various vortex–vortex interactions,including the competing one in the recently proposed type-1.5 superconductor.However,potential candidat... Multicomponent superconductors exhibit nontrivial vortex behaviors due to the various vortex–vortex interactions,including the competing one in the recently proposed type-1.5 superconductor.However,potential candidate that can be used to study the multicomponent superconductivity is rare.Here,we prepared an artificial superconducting multilayer to act as an alternative approach to study multicomponent superconductivity.The additional repulsive length and the coupling strength among superconducting films were regulated by changing the thickness of the insulting layer.The magnetization measurements were performed to clarify the effect of the competition between the repulsive vortex interactions on the macroscopic superconductivity.The vortex phase diagram and the optimum critical current density have been determined.Furthermore,a second magnetization effect is observed,and is attributed to the upper layer,which provides the weak pinning sites to localize the flux lines.The pinning behaviors switches to the mixed type with the increase of the insulting layer thicknesses.Our results open a new perspective to the study and related applications of the multilayer superconducting systems. 展开更多
关键词 multilayer superconducting film competing interaction flux pinning mechanism
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Evolution of Residual Stress and Structure in YSZ/SiO_(2) Multilayers with Different Modulation Ratios 被引量:1
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作者 肖祁陵 胡国行 +1 位作者 贺洪波 邵建达 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第2期118-120,共3页
The multilayer(ML)YSZ/SiO_(2) films with different modulation ratios ranging from 1:3,4:9,1:1 to 3:1(the thickness ratio of the YSZ to SiO_(2))are deposited on BK7 glass substrates by electron beam evaporation under t... The multilayer(ML)YSZ/SiO_(2) films with different modulation ratios ranging from 1:3,4:9,1:1 to 3:1(the thickness ratio of the YSZ to SiO_(2))are deposited on BK7 glass substrates by electron beam evaporation under the same processing conditions.The effect of modulation ratio on the residual stresses and structure are investigated by an optical interferometer and Grazing incidence x-ray diffraction.The results show that the total residual stress in MLs is compressive and decreases to tensile when the modulation ratio is changed from 1:3 to 3:1.The YSZ films are of cubic phase structure and the SiO_(2) films are amorphous in all the MLs.The change of residual stress in these MLs can be attributed to the variation of an individual layer?s stress with thickness,which indicates that adjusting the thickness ratio of two materials is an effective measure for depositing near-zero stress MLs. 展开更多
关键词 STRESS YSZ STRUCTURE
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Influence of Ytterbia Content on Residual Stress and Microstructure of Y2O3-ZrO2 Thin Films Prepared by EB-PVD
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作者 肖祁陵 邵淑英 +2 位作者 贺洪波 邵建达 范正修 《Chinese Physics Letters》 SCIE CAS CSCD 2008年第9期3433-3435,共3页
Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12 mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on res... Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12 mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques: the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress increases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content. 展开更多
关键词 the power-law exponents PRECIPITATION durative abrupt precipitation change
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Wavelength Dependence of Laser-Induced Bulk Damage Morphology in KDP Crystal:Determination of the Damage Formation Mechanism 被引量:3
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作者 胡国行 赵元安 +1 位作者 李大伟 肖祁陵 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第3期216-219,共4页
Wet etch process is applied to expose the bulk damage sites in KDP crystals to the surface for the examination by scanning electron microscopy(SEM)and optical microscopy.The damage sites induced by 1064 nm laser consi... Wet etch process is applied to expose the bulk damage sites in KDP crystals to the surface for the examination by scanning electron microscopy(SEM)and optical microscopy.The damage sites induced by 1064 nm laser consist of three distinct regions:a core,an outer region of modified material,and some oriented cracks.Laser irradiated with 355 nm results in an increase of damage density,a decrease of core diameter and,rarely,occurrence of the crack.WavelengKey Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences,Shanghai 201800th dependence of the damage feature suggests that a repulsive force exists among the adjacent plasmas,which prevents further expansion of plasma and decreases the size of plasma.The deposited energy absorbed by the smaller plasma may not be able to generate the crack. 展开更多
关键词 CRYSTAL DAMAGE KDP
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Two-Dimensional Electron Gas in MoSi_(2)N_(4)/VSi_(2)N_(4)Heterojunction by First Principles Calculation
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作者 高瑞灵 刘超 +11 位作者 方乐 姚碧霞 吴伟 肖祁陵 胡顺波 刘禹 高恒 曹世勋 宋广生 孟祥建 陈效双 任伟 《Chinese Physics Letters》 SCIE EI CAS CSCD 2022年第12期57-64,共8页
Van der Waals(vdW)layered two-dimensional(2D)materials,which may have high carrier mobility,valley polarization,excellent mechanical properties and air stability,have been widely investigated before.We explore the pos... Van der Waals(vdW)layered two-dimensional(2D)materials,which may have high carrier mobility,valley polarization,excellent mechanical properties and air stability,have been widely investigated before.We explore the possibility of producing a spin-polarized two-dimensional electron gas(2DEG)in the heterojunction composed of insulators MoSi_(2)N_(4)and VSi_(2)N_(4)by using first-principles calculations.Due to the charge transfer effect,the 2DEG at the interface of the MoSi_(2)N_(4)/VSi_(2)N_(4)heterojunction is found.Further,for different kinds of stacking of heterojunctions,lattice strain and electric fields can effectively tune the electronic structures and lead to metal-to-semiconductor transition.Under compressive strain or electric field parallel to c axis,the 2DEG disappears and band gap opening occurs.On the contrary,interlayer electron transfer enforces the system to become metallic under the condition of tensile strain or electric field anti-parallel to c axis.These changes are mainly attributed to electronic redistribution and orbitals’reconstruction.In addition,we reveal that MoSi_(2)N_(4)/VSi_(2)N_(4)lateral heterojunctions of armchair and zigzag edges exhibit different electronic properties,such as a large band gap semiconductor and a metallic state.Our findings provide insights into electronic band engineering of MoSi_(2)N_(4)/VSi_(2)N_(4)heterojunctions and pave the way for future spintronics applications. 展开更多
关键词 HETEROJUNCTION POLARIZATION METALLIC
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沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响 被引量:8
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作者 肖祁陵 贺洪波 +2 位作者 邵淑英 邵建达 范正修 《光学学报》 EI CAS CSCD 北大核心 2008年第5期1007-1011,共5页
采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应... 采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响。实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状态。 展开更多
关键词 薄膜光学 残余应力 氧化钇稳定氧化锆薄膜 沉积温度
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氧分压和沉积速率对YSZ薄膜残余应力的影响 被引量:4
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作者 肖祁陵 邵淑英 +1 位作者 邵建达 范正修 《中国激光》 EI CAS CSCD 北大核心 2009年第5期1195-1199,共5页
采用摩尔分数为7%的Y2O3掺杂的ZrO2混合烧结料为原料,在不同的氧分压和沉积速率下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGO MarkⅢ-GPI数字波面干涉仪对YSZ薄膜的残余应力进行了研究,讨论了氧分压和沉积速牢等工... 采用摩尔分数为7%的Y2O3掺杂的ZrO2混合烧结料为原料,在不同的氧分压和沉积速率下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGO MarkⅢ-GPI数字波面干涉仪对YSZ薄膜的残余应力进行了研究,讨论了氧分压和沉积速牢等工艺参节对残余应力的影响。实验结果表明,不同氧分压和沉积速率下,YSZ薄膜的残余应力均为张应力;应力值随氧分压的升高先增大后减小,随沉积速率的增加单调增加。热应力对薄膜所呈现的张应力性质起着决定性作用,同时应力值的大小受本征应力和附加应力的影响。通过对样品的X射线衍射(XRI))测试,结合薄膜做结构的变化,对应力的形成原因进行了解释。 展开更多
关键词 薄膜 残余应力 YSZ薄膜 氧分压 沉积速率
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高质量GaN/Al_2O_3薄膜的三晶高分辨X射线衍射研究
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作者 肖祁陵 张萌 王立 《功能材料与器件学报》 EI CAS CSCD 北大核心 2006年第6期524-528,共5页
通过对常压MOCVD工艺下制备的GaN/A l2O3两种样品的X射线衍射分析,利用不同的掠入射角及倾斜ω扫描,精确测量了GaN薄膜的晶体结构和位错密度,据此提出了一种表征薄膜纵向位错密度的新方法。结果表明实验制备的GaN薄膜具有相当一致的c轴... 通过对常压MOCVD工艺下制备的GaN/A l2O3两种样品的X射线衍射分析,利用不同的掠入射角及倾斜ω扫描,精确测量了GaN薄膜的晶体结构和位错密度,据此提出了一种表征薄膜纵向位错密度的新方法。结果表明实验制备的GaN薄膜具有相当一致的c轴取向,对称衍射(002)面ω扫描半峰宽分别为229.8arcsec、225.7 arcsec;同时,根据倾斜对称ω扫描半峰宽分析认为样品A、B的位错密度分别约为4.0801×108/cm2,5.8724×108/cm2,其样品A的位错密度小于样品B,但PL谱给出样品A的发光效率低于样品B;而根据不同的掠入射ω扫描推断出样品A的位错密度大于样品B,与相应的发光性能吻合。 展开更多
关键词 GAN 高分辨X射线衍射 位错密度 掠入射
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不同方法制备的Ta2O5薄膜光学性能和激光损伤阈值的对比分析 被引量:12
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作者 许程 董洪成 +3 位作者 肖祁陵 麻健勇 晋云霞 邵建达 《中国激光》 EI CAS CSCD 北大核心 2008年第10期1595-1599,共5页
采用电子束蒸发(EBE)和离子束溅射(IBS)制备了不同的Ta_2O_5薄膜,同时对电子束蒸发制备的薄膜进行了退火处理。研究了制备的Ta_2O_5薄膜的光学性能、激光损伤阈值(LIDT)、吸收、散射、粗糙度、微缺陷密度和杂质含量。结果表明,退火可使... 采用电子束蒸发(EBE)和离子束溅射(IBS)制备了不同的Ta_2O_5薄膜,同时对电子束蒸发制备的薄膜进行了退火处理。研究了制备的Ta_2O_5薄膜的光学性能、激光损伤阈值(LIDT)、吸收、散射、粗糙度、微缺陷密度和杂质含量。结果表明,退火可使电子束蒸发制备的薄膜的光学性能得到改善,接近离子束溅射的薄膜的光学性能。电子束蒸发制备的薄膜的损伤阈值较低的主要原因在于吸收大,微缺陷密度和杂质含量高,而与薄膜的散射和粗糙度关系不大。退火后薄膜的吸收和微缺陷密度都明显降低,损伤阈值得到提高。退火后的薄膜损伤阈值仍然低于溅射得到的薄膜损伤阈值是因为退火并不能降低膜内的杂质含量,因此选用高纯度的蒸发膜料和减少电子束蒸发过程中的污染有可能进一步提高薄膜的损伤阈值。 展开更多
关键词 薄膜 激光损伤阈值 吸收 退火
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Influences of Y_2O_3 dopant content on residual stress,structure,and optical properties of ZrO_2 thin films 被引量:3
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作者 肖祁陵 邵淑英 +1 位作者 邵建达 范正修 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第2期162-164,共3页
Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 contents (from 0 to 12 mol%) are deposited on BK7 glass substrates by electron-beam evaporation method. The effects of different Y2O3 dopant ... Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 contents (from 0 to 12 mol%) are deposited on BK7 glass substrates by electron-beam evaporation method. The effects of different Y2O3 dopant contents on residual stress, structure, and optical properties of ZrO2 thin films are investigated. The results show that residual stress in YSZ thin films varies from tensile to compressive with the increase of Y2O3 molar content. The addition of Y2O3 is beneficial to the crystallization of YSZ thin film and transformation from amorphous to high temperature phase, and the refractive index decreases with the increase of Y2O3 molar content. Moreover, the variations of residual stress and the shifts of refractive index correspond to the evolution of structures induced by the addition of Y2O3. 展开更多
关键词 Light refraction Refractive index REFRACTOMETERS Residual stresses Strength of materials Thin films Zirconium alloys
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Nb含量对Ti-Nb合金薄膜微观形貌与力学性能的影响 被引量:1
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作者 郭孝云 肖祁陵 +1 位作者 马昕迪 王刚 《中国科学:技术科学》 EI CSCD 北大核心 2020年第6期801-810,共10页
Ti-Nb合金薄膜因其形状记忆效应和良好的生物相容性引起广泛关注.本文通过调节Ti-Nb合金薄膜中的Nb含量,实现了对薄膜表面和横截面微观形貌、晶体结构、力学性能的调控.研究发现,随着Nb含量的增加,薄膜表面微观形貌从圆整颗粒状过渡到... Ti-Nb合金薄膜因其形状记忆效应和良好的生物相容性引起广泛关注.本文通过调节Ti-Nb合金薄膜中的Nb含量,实现了对薄膜表面和横截面微观形貌、晶体结构、力学性能的调控.研究发现,随着Nb含量的增加,薄膜表面微观形貌从圆整颗粒状过渡到互相交织的针叶状;晶粒从贯穿横截面的柱状晶过渡到介于等轴晶和柱状晶之间的状态;薄膜晶体结构呈现出(211)β晶面逐步取代(103)α晶面并最终由β单相组成的演变过程.Ti-16Nb(原子百分比,下文同)和Ti-20Nb薄膜纳米压痕实验的加载曲线上出现pop-in现象,证实其存在超弹性,对应的马氏体相变临界载荷分别为1761和2247μN.Ti-20Nb薄膜由于相互交织的针叶状组织,其硬度值达到7.43±0.12 GPa,屈服强度提高至2.64±0.07 GPa.同时,β单相的晶体结构使得Ti-20Nb薄膜弹性能量回复率大幅提升至53.49%±0.94%,从而提高薄膜抵抗塑性变形的能力,可保证MEMS器件在使用过程中的控制精度,并延长其使用寿命. 展开更多
关键词 Ti-Nb薄膜 微观形貌 晶体结构 力学性能 超弹性
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