研究了P型MOSFET的NBTI效应退化机理,以及栅氧化层电场和沟道载流子浓度对NBTI效应的影响.首先,通过电荷泵实验对NBTI应力带来的p M OSFET的界面损伤进行了测试,并利用TCAD仿真软件对测试结果进行分析,结果表明该器件的NBTI退化主要由...研究了P型MOSFET的NBTI效应退化机理,以及栅氧化层电场和沟道载流子浓度对NBTI效应的影响.首先,通过电荷泵实验对NBTI应力带来的p M OSFET的界面损伤进行了测试,并利用TCAD仿真软件对测试结果进行分析,结果表明该器件的NBTI退化主要由其沟道区的界面态产生引起,而电荷注入的影响相对可以忽略.然后,通过施加衬底偏置电压的方法实现了增加器件栅氧化层电场但保持沟道载流子浓度不变的效果,进而研究了栅氧化层电场和沟道载流子浓度2个内在因素分别对NBTI退化的影响.最后,通过对比不同栅极电压和不同衬底偏置电压条件下器件的2个内在影响因素变化与NBTI退化的关系,证明了p MOSFET的NBTI效应主要由器件的栅氧化层电场决定,沟道载流子浓度对器件NBTI效应的影响可以忽略.展开更多
The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
文摘研究了P型MOSFET的NBTI效应退化机理,以及栅氧化层电场和沟道载流子浓度对NBTI效应的影响.首先,通过电荷泵实验对NBTI应力带来的p M OSFET的界面损伤进行了测试,并利用TCAD仿真软件对测试结果进行分析,结果表明该器件的NBTI退化主要由其沟道区的界面态产生引起,而电荷注入的影响相对可以忽略.然后,通过施加衬底偏置电压的方法实现了增加器件栅氧化层电场但保持沟道载流子浓度不变的效果,进而研究了栅氧化层电场和沟道载流子浓度2个内在因素分别对NBTI退化的影响.最后,通过对比不同栅极电压和不同衬底偏置电压条件下器件的2个内在影响因素变化与NBTI退化的关系,证明了p MOSFET的NBTI效应主要由器件的栅氧化层电场决定,沟道载流子浓度对器件NBTI效应的影响可以忽略.
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
