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Ultrasensitive nanosensors based on localized surface plasmon resonances:From theory to applications 被引量:5
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作者 陈文 胡华天 +3 位作者 姜巍 徐宇浩 张顺平 徐红星 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第10期58-78,共21页
The subwavelength confinement feature of localized surface plasmon resonance(LSPR) allows plasmonic nanostructures to be functionalized as powerful platforms for detecting various molecular analytes as well as weak ... The subwavelength confinement feature of localized surface plasmon resonance(LSPR) allows plasmonic nanostructures to be functionalized as powerful platforms for detecting various molecular analytes as well as weak processes with nanoscale spatial resolution. One of the main goals of this field of research is to lower the absolute limit-of-detection(LOD)of LSPR-based sensors. This involves the improvement of(i) the figure-of-merit associated with structural parameters such as the size, shape and interparticle arrangement and,(ii) the spectral resolution. The latter involves advanced target identification and noise reduction techniques. By highlighting the strategies for improving the LOD, this review introduces the fundamental principles and recent progress of LSPR sensing based on different schemes including 1) refractometric sensing realized by observing target-induced refractive index changes, 2) plasmon rulers based on target-induced relative displacement of coupled plasmonic structures, 3) other relevant LSPR-based sensing schemes including chiral plasmonics,nanoparticle growth, and optomechanics. The ultimate LOD and the future trends of these LSPR-based sensing are also discussed. 展开更多
关键词 plasmonic sensing localized surface plasmon resonance plasmon rulers NANOPARTICLES
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Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
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作者 何小波 胡华天 +8 位作者 唐继博 张国桢 陈雪 石俊俊 欧振伟 史志锋 张顺平 刘昌 徐红星 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第1期598-602,共5页
Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal o... Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices. 展开更多
关键词 ELECTROLUMINESCENCE PLASMONICS inelastic electron tunneling multilayer insulator atomic layer deposition
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