We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1 Ga0.9N/...We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1 Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.展开更多
Two independent excitation function measurements have been performed in the reaction system of ^19F+^93Nb using two target foils of the same nominal thickness. We measured the dissipative reaction products at incident...Two independent excitation function measurements have been performed in the reaction system of ^19F+^93Nb using two target foils of the same nominal thickness. We measured the dissipative reaction products at incident energies of 102 through 108 MeV with a step of 250ke V. The variance of energy autocorrelation functions of the reaction products was found to be three times of that originated from the randomized counting rates. By analysing the probability distributions of the deviations in the measured cross sections, we found that about 20% of all the deviations exceeds three standard deviations. This indicates that the non-reproduclbility of the cross sections in the two independent measurements is of a statistical significance but not originated from randomized fluctuation of counting rates.展开更多
文摘We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1 Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.
文摘Two independent excitation function measurements have been performed in the reaction system of ^19F+^93Nb using two target foils of the same nominal thickness. We measured the dissipative reaction products at incident energies of 102 through 108 MeV with a step of 250ke V. The variance of energy autocorrelation functions of the reaction products was found to be three times of that originated from the randomized counting rates. By analysing the probability distributions of the deviations in the measured cross sections, we found that about 20% of all the deviations exceeds three standard deviations. This indicates that the non-reproduclbility of the cross sections in the two independent measurements is of a statistical significance but not originated from randomized fluctuation of counting rates.
