demonstrated to hydrogenate dangling bonds on the surface of crystalline silicon(c-Si),which reduces the interface defect density,thus enabling an outstanding passivation effect[1–3].However,like many other industria...demonstrated to hydrogenate dangling bonds on the surface of crystalline silicon(c-Si),which reduces the interface defect density,thus enabling an outstanding passivation effect[1–3].However,like many other industrial c-Si solar cells that suffer from light-induced degradation and light and elevated temperature induced degradation(LeTID)[4,5],the decay of electrical properties has also been found in thin-film a-Si:H solar cells[6–8],as well as samples of c-Si coated with intrinsic a-Si:H films after light soaking[9].A significant observation reported by Plagwitz et al.[10]suggested that illumination induced an increase in surface recombination velocities for both a-Si:H coated p-type and n-type c-Si substrates.The degradation of performance is generally attributed to the generation of deeplevel defects acting as recombination centers,most likely as single dangling bonds[11,12],which is considered to be related to the Staebler-Wronski effect(SWE)[13].展开更多
基金the National Natural Science Foundation of China(61974129,62025403,and 61721005)the Natural Science Foundation of Zhejiang Province(LD22E020001)Lingyan Research and Development Project of Zhejiang Province(022C01215).
文摘demonstrated to hydrogenate dangling bonds on the surface of crystalline silicon(c-Si),which reduces the interface defect density,thus enabling an outstanding passivation effect[1–3].However,like many other industrial c-Si solar cells that suffer from light-induced degradation and light and elevated temperature induced degradation(LeTID)[4,5],the decay of electrical properties has also been found in thin-film a-Si:H solar cells[6–8],as well as samples of c-Si coated with intrinsic a-Si:H films after light soaking[9].A significant observation reported by Plagwitz et al.[10]suggested that illumination induced an increase in surface recombination velocities for both a-Si:H coated p-type and n-type c-Si substrates.The degradation of performance is generally attributed to the generation of deeplevel defects acting as recombination centers,most likely as single dangling bonds[11,12],which is considered to be related to the Staebler-Wronski effect(SWE)[13].
