Schimmel腐蚀液腐蚀结合高倍光学显微镜观察发现 ,不同尺寸的掩膜窗内生长的 Si Ge外延层中的位错密度在整个外延层中从 Si Ge/Si界面到 Si Ge外延层表面由少到多 ,再由多到少明显地分成 3个区 .无掩膜窗限制的大面积区内的 Si Ge层则...Schimmel腐蚀液腐蚀结合高倍光学显微镜观察发现 ,不同尺寸的掩膜窗内生长的 Si Ge外延层中的位错密度在整个外延层中从 Si Ge/Si界面到 Si Ge外延层表面由少到多 ,再由多到少明显地分成 3个区 .无掩膜窗限制的大面积区内的 Si Ge层则只呈现 2个区 .掩膜材料与掩膜窗尺寸不同 ,这 3个区的位错密度也不同 .掩膜形成过程中产生的应力对衬底晶格的影响 ,以及掩膜边界对衬底与外延层的影响是造成这种不同的根本原因 .展开更多
A relatively simple and inexpensive inverse photoemission spectrometer(IPS)with high resolution and high efficiency has been set up.Using this IPS,the inverse photoemission spectrum of Si(100)2×1 surface has been...A relatively simple and inexpensive inverse photoemission spectrometer(IPS)with high resolution and high efficiency has been set up.Using this IPS,the inverse photoemission spectrum of Si(100)2×1 surface has been obtained.The resolution of the spectrum is better than O.SeV at 9.8eV photon energy with a counting rate about 10^(3)/μA·S·sr.展开更多
文摘Schimmel腐蚀液腐蚀结合高倍光学显微镜观察发现 ,不同尺寸的掩膜窗内生长的 Si Ge外延层中的位错密度在整个外延层中从 Si Ge/Si界面到 Si Ge外延层表面由少到多 ,再由多到少明显地分成 3个区 .无掩膜窗限制的大面积区内的 Si Ge层则只呈现 2个区 .掩膜材料与掩膜窗尺寸不同 ,这 3个区的位错密度也不同 .掩膜形成过程中产生的应力对衬底晶格的影响 ,以及掩膜边界对衬底与外延层的影响是造成这种不同的根本原因 .
文摘A relatively simple and inexpensive inverse photoemission spectrometer(IPS)with high resolution and high efficiency has been set up.Using this IPS,the inverse photoemission spectrum of Si(100)2×1 surface has been obtained.The resolution of the spectrum is better than O.SeV at 9.8eV photon energy with a counting rate about 10^(3)/μA·S·sr.
