This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas(DRAs)based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent mod...This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas(DRAs)based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent modes with similar radiation patterns.The impedance bandwidth of 18.6%with the peak gain of 6 dBi is achieved for the proposed on-chip dual-mode DRA.In addition,the impedance bandwidth of 20.1%with the peak gain of 6.9 dBi is achieved for the proposed three-mode DRA.To the best of authors’knowledge,the on-chip multi-mode DRAs are first proposed.The impedance bandwidth of the proposed three-mode on-chip DRA is wider than the other on-chip DRAs using planar feeding with on-chip ground.The proposed antennas are promising for terahertz applications due to the merits of wide band,high gain and high radiation efficiency.展开更多
基金the National Natural Science Foundation of China(No.61701339).
文摘This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas(DRAs)based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent modes with similar radiation patterns.The impedance bandwidth of 18.6%with the peak gain of 6 dBi is achieved for the proposed on-chip dual-mode DRA.In addition,the impedance bandwidth of 20.1%with the peak gain of 6.9 dBi is achieved for the proposed three-mode DRA.To the best of authors’knowledge,the on-chip multi-mode DRAs are first proposed.The impedance bandwidth of the proposed three-mode on-chip DRA is wider than the other on-chip DRAs using planar feeding with on-chip ground.The proposed antennas are promising for terahertz applications due to the merits of wide band,high gain and high radiation efficiency.
