Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimenta...Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we used simulation tools to estimate three structures in power MOSFETs,and found that if certain conditions are met,areas other than cell regions can become sensitive to SEGR.Finally,some proposals are given as to how to reduce SEGR in different regions.展开更多
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
文摘Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we used simulation tools to estimate three structures in power MOSFETs,and found that if certain conditions are met,areas other than cell regions can become sensitive to SEGR.Finally,some proposals are given as to how to reduce SEGR in different regions.
