A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance i...A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.展开更多
An accurate frequency response characterization method for photoreceivers with optical heterodyne technique is presented in this paper.The characterization is implemented with two single-mode tunable lasers operating ...An accurate frequency response characterization method for photoreceivers with optical heterodyne technique is presented in this paper.The characterization is implemented with two single-mode tunable lasers operating near the wavelength of 1.55 μm.The errors introduced by extra fixtures as well as laser output fluctuations are considered and calibrated simultaneously.Compared with previous works,the proposed calibration procedures are more complete.Experimental results indicate that the significant improvement in measurement precision has been achieved with the proposed method in the frequency range from 0 to 30 GHz,which proves the proposed frequency response characterization method to be feasible and reliable.展开更多
Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typ...Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.展开更多
文摘A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.
文摘An accurate frequency response characterization method for photoreceivers with optical heterodyne technique is presented in this paper.The characterization is implemented with two single-mode tunable lasers operating near the wavelength of 1.55 μm.The errors introduced by extra fixtures as well as laser output fluctuations are considered and calibrated simultaneously.Compared with previous works,the proposed calibration procedures are more complete.Experimental results indicate that the significant improvement in measurement precision has been achieved with the proposed method in the frequency range from 0 to 30 GHz,which proves the proposed frequency response characterization method to be feasible and reliable.
基金This work was supported by the National Basic Research Program of China(No.2003CB314901)the 111 Project(B07005)the Program for New Century Excellent Talents in University of China(NCET-05-0111).
文摘Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.
