有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变...有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。展开更多
为了减少封装过程中静电对微波混合电路中敏感芯片造成的损伤,本文针对高电子迁移率场效应晶体管(high electron mobility transistors,HEMT)制备工艺中的氮化镓功率放大器和砷化镓低噪声放大器两种典型微波混合电路,从产品的防静电设...为了减少封装过程中静电对微波混合电路中敏感芯片造成的损伤,本文针对高电子迁移率场效应晶体管(high electron mobility transistors,HEMT)制备工艺中的氮化镓功率放大器和砷化镓低噪声放大器两种典型微波混合电路,从产品的防静电设计角度和平行缝焊工装的设计优化两个方面,提出了两套解决方案,从而有效提升两款器件的静电防护能力和长期可靠性。展开更多
Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide （ITO）/bis（8-hydroxyquinoline） cadmium （Cdq2）/Al. Aggregate formation and electric field d...Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide （ITO）/bis（8-hydroxyquinoline） cadmium （Cdq2）/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital （HOMO） and the lowest unoccupied molecular orbital （LUMO） of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, and this was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.展开更多
文摘有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。
文摘为了减少封装过程中静电对微波混合电路中敏感芯片造成的损伤,本文针对高电子迁移率场效应晶体管(high electron mobility transistors,HEMT)制备工艺中的氮化镓功率放大器和砷化镓低噪声放大器两种典型微波混合电路,从产品的防静电设计角度和平行缝焊工装的设计优化两个方面,提出了两套解决方案,从而有效提升两款器件的静电防护能力和长期可靠性。
基金the National Natural Science Foundation of China(Grant No.10974074)
文摘Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide （ITO）/bis（8-hydroxyquinoline） cadmium （Cdq2）/Al. Aggregate formation and electric field driven trapping and detrapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital （HOMO） and the lowest unoccupied molecular orbital （LUMO） of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, and this was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories.
