为了提高脉冲功率装置的使用寿命,研究了Sr Ti O3基高压陶瓷电容器在有10?负载和无负载两种条件下持续充放电过程中的使用寿命。详细分析了电容器使用寿命随着充电电压的增加而减小的原因,充电电压的增加会导致电容器充放电过程中陶瓷...为了提高脉冲功率装置的使用寿命,研究了Sr Ti O3基高压陶瓷电容器在有10?负载和无负载两种条件下持续充放电过程中的使用寿命。详细分析了电容器使用寿命随着充电电压的增加而减小的原因,充电电压的增加会导致电容器充放电过程中陶瓷介质所受的电致应力和温度增加,从而加快了放电通道的发展和漏电流的增加,导致了电容器寿命的缩短。详细分析了放电回路负载的存在使电容器寿命增加的原因。放电回路负载的存在使得电容器温度增加变慢,从而减慢了电容器充放电过程中击穿的发展速度。在无负载持续充放电的条件下,要使电容器的充放电寿命增加到105次,充电电压需要减小到~70%额定电压;在有10?负载持续充放电的条件下,要使电容器的充放电寿命增加到105次,充电电压需要减小到~80%额定电压。展开更多
Organic light emitting diodes are fabricated based on metal-free phthalocyanine （H2Pc） doped into tris-（8- hydroxyquinoline） aluminium （Alq3）. The device structure is ITO/NPB （30 nm）/Alq3： H2Pc（30 nm）/BCP（...Organic light emitting diodes are fabricated based on metal-free phthalocyanine （H2Pc） doped into tris-（8- hydroxyquinoline） aluminium （Alq3）. The device structure is ITO/NPB （30 nm）/Alq3： H2Pc（30 nm）/BCP（20 nm） /Alq3（20nm）/Al. In the light-emitting layers, H2Pc concentrations are varied from Owt% to 100 wt%. The emissions around 708nm and 800hm appear at low concentrations, while the emissions around 910hm and 930hm appear at high concentrations. The emissions around 708nm and 800nm are from H2Pc monomers. The emissions around 910hm and 930hm are from H2Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping.展开更多
We demonstrate near-infrared organic light-emitting devices with a periodically arranged tris（8-quinolinolato）aluminum （Alq3）：copper phthalocyanine （CuPc）/4-（dicyanomethylene）-2-methyl-6-（4-dimethylaminost-...We demonstrate near-infrared organic light-emitting devices with a periodically arranged tris（8-quinolinolato）aluminum （Alq3）：copper phthalocyanine （CuPc）/4-（dicyanomethylene）-2-methyl-6-（4-dimethylaminost-yry）-4H-pyran （DCM） multilayer structure. DCM and Alq3 doped with CuPc were periodically deposited. Room-temperature electrophosphorescence was observed at about 1.1 μm due to transitions from the first excited triplet state to the singlet ground state （T1 - S0） of CuPc. In this device, we utilize the overlap between the Q band πr - π^＊ at about 625nm of the absorption spectra of CuPc and the PL spectra of the DCM. The near-infrared emission intensity of the CuPc-doped Alq3 device with DCM increases about 2.5 times larger than that of the device without DCM. We attribute the efficiency enhancement to the better overlap between the PL spectra of DCM and the absorption spectra of CuPc.展开更多
We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （T...We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （TPBI）. The device structure is ITO/ NPB/ TPBI：CuPcF16/BCP/Alq3/Al. Room-temperature electro- luminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state （T1-S0） of CuPcF16. The result indicates that FSrster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPeF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.展开更多
文摘半导体激光二极管触发下砷化镓(Ga As)光导开关工作于雪崩模式,为此设计了异面体结构的Ga As光导开关以提高开关场强。设计的开关芯片厚度为2 mm,电极间隙为3 mm,利用半导体激光二极管对开关进行触发实验。当开关充电电压超过8 k V后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始雪崩工作模式。随着开关电场不断增加,开关输出电压幅值也线性增加,但开关输出波形没有改变。对开关抖动进行测试,其测试结果显示开关偏压对抖动影响很大,随着开关偏压增加,开关抖动减小,当开关偏压升至15 k V时,开关获得最小抖动约500 ps。
文摘为了提高脉冲功率装置的使用寿命,研究了Sr Ti O3基高压陶瓷电容器在有10?负载和无负载两种条件下持续充放电过程中的使用寿命。详细分析了电容器使用寿命随着充电电压的增加而减小的原因,充电电压的增加会导致电容器充放电过程中陶瓷介质所受的电致应力和温度增加,从而加快了放电通道的发展和漏电流的增加,导致了电容器寿命的缩短。详细分析了放电回路负载的存在使电容器寿命增加的原因。放电回路负载的存在使得电容器温度增加变慢,从而减慢了电容器充放电过程中击穿的发展速度。在无负载持续充放电的条件下,要使电容器的充放电寿命增加到105次,充电电压需要减小到~70%额定电压;在有10?负载持续充放电的条件下,要使电容器的充放电寿命增加到105次,充电电压需要减小到~80%额定电压。
基金Supported by the National Natural Science Foundation of China under Grant No 20472014, the Doctoral Foundation of Dalian University of Technology （30054893327）, and Young Teacher Foundation of Dalian University of Technology （3005-893212）.
文摘Organic light emitting diodes are fabricated based on metal-free phthalocyanine （H2Pc） doped into tris-（8- hydroxyquinoline） aluminium （Alq3）. The device structure is ITO/NPB （30 nm）/Alq3： H2Pc（30 nm）/BCP（20 nm） /Alq3（20nm）/Al. In the light-emitting layers, H2Pc concentrations are varied from Owt% to 100 wt%. The emissions around 708nm and 800hm appear at low concentrations, while the emissions around 910hm and 930hm appear at high concentrations. The emissions around 708nm and 800nm are from H2Pc monomers. The emissions around 910hm and 930hm are from H2Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping.
基金Supported by the National Natural Science Foundation of China under Grant No 20472014, the Young Teacher Foundation of Dalian University of Technology under Grant No 3005-893212, the Doctoral Foundation of Dalian University of Technology under Grant No 3005-893327.
文摘We demonstrate near-infrared organic light-emitting devices with a periodically arranged tris（8-quinolinolato）aluminum （Alq3）：copper phthalocyanine （CuPc）/4-（dicyanomethylene）-2-methyl-6-（4-dimethylaminost-yry）-4H-pyran （DCM） multilayer structure. DCM and Alq3 doped with CuPc were periodically deposited. Room-temperature electrophosphorescence was observed at about 1.1 μm due to transitions from the first excited triplet state to the singlet ground state （T1 - S0） of CuPc. In this device, we utilize the overlap between the Q band πr - π^＊ at about 625nm of the absorption spectra of CuPc and the PL spectra of the DCM. The near-infrared emission intensity of the CuPc-doped Alq3 device with DCM increases about 2.5 times larger than that of the device without DCM. We attribute the efficiency enhancement to the better overlap between the PL spectra of DCM and the absorption spectra of CuPc.
基金supported by the Doctoral Foundation of Dalian University of Technology (No.3005-893327)the National Natural Science Foundation of China (No.60807009)the Young Teacher Foundation of Dalian University of Technology (No.3005-893212)
文摘We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （TPBI）. The device structure is ITO/ NPB/ TPBI：CuPcF16/BCP/Alq3/Al. Room-temperature electro- luminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state （T1-S0） of CuPcF16. The result indicates that FSrster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPeF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.
