Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realizati...Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 52173283)Taishan Scholar Program of Shandong Province (Grant No. ts20190939)Independent Cultivation Program of Innovation Team of Jinan City (Grant No. 2021GXRC043)。
文摘Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.
