装配式结构是以预制构件为主要受力构件经装配连接而成的混凝土结构。基于模型的信息化管理(Building Information Modeling)是以建筑工程项目的各项相关信息数据作为基础,管理三维建筑模型,通过数字信息仿真模拟建筑物所具有的真实信...装配式结构是以预制构件为主要受力构件经装配连接而成的混凝土结构。基于模型的信息化管理(Building Information Modeling)是以建筑工程项目的各项相关信息数据作为基础,管理三维建筑模型,通过数字信息仿真模拟建筑物所具有的真实信息。将BIM技术引入装配式建筑楼板构件中,建立装配式楼板构件的自适应族,获得具有较高自适应能力的构件族,提高构件的信息化精度、数据化全面性,具有较高的工程实际意义。展开更多
Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this stu...Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in Zn O-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the Zn O（0001） plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of Zn O,whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.展开更多
We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We...We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We show that the SET process, i.e., from a high resistive state to a low resistive state, is attributable to the aggregation and regular arrangement of the oxygen vacancies, which causes the formation of conductive filaments and leads to the low resistive state of the system.展开更多
文摘装配式结构是以预制构件为主要受力构件经装配连接而成的混凝土结构。基于模型的信息化管理(Building Information Modeling)是以建筑工程项目的各项相关信息数据作为基础,管理三维建筑模型,通过数字信息仿真模拟建筑物所具有的真实信息。将BIM技术引入装配式建筑楼板构件中,建立装配式楼板构件的自适应族,获得具有较高自适应能力的构件族,提高构件的信息化精度、数据化全面性,具有较高的工程实际意义。
基金Project supported by the Natural Science Foundation of Hebei Province,China(Grant Nos.A2013205149 and E2013210133)the Hebei Provincial Education Department,China(Grant Nos.ZH2012067 and 2011170)
文摘Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in Zn O-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the Zn O（0001） plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of Zn O,whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.
基金Supported by the Natural Science Foundation of Hebei Province under Grant No A2013205149, and the Key Project of Hebei Education Department under Grant No ZH2012067.
文摘We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We show that the SET process, i.e., from a high resistive state to a low resistive state, is attributable to the aggregation and regular arrangement of the oxygen vacancies, which causes the formation of conductive filaments and leads to the low resistive state of the system.
