Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of p...Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.展开更多
基金supported by the Sichuan Science and Technology Program(2023YFG0098 and 2023ZYD0163)National Natural Science Foundation of China(T2322028)+2 种基金Science and Technology Commission of Shanghai Municipality(22ZR1473200)Chengdu Science and Technology Program(2024-JB00-00010-GX)Sichuan Province Key Laboratory of Display Science and Technology。
文摘Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.
