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Role of vacancy-type defects in magnetism of GaMnN 被引量:1
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作者 邢海英 陈雨 +6 位作者 纪骋 蒋盛翔 苑梦尧 郭志英 李琨 崔明启 张国义 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第6期517-522,共6页
Role of vacancy-type(N vacancy(VN) and Ga vacancy(VGa)) defects in magnetism of GaMnN is investigated by first-principle calculation.Theoretical results show that both the VNand VGainfluence the ferromagnetic st... Role of vacancy-type(N vacancy(VN) and Ga vacancy(VGa)) defects in magnetism of GaMnN is investigated by first-principle calculation.Theoretical results show that both the VNand VGainfluence the ferromagnetic state of a system.The VNcan induce antiferromagnetic state and the VGaindirectly modify the stability of the ferromagnetic state by depopulating the Mn levels in GaMnN.The transfer of electrons between the vacancy defects and Mn ions results in converting Mn3+(d4) into Mn2+(d5).The introduced VNand the ferromagnetism become stronger and then gradually weaker with Mn concentration increasing,as well as the coexistence of Mn3+(d4) and Mn2+(d5) are found in GaMnN films grown by metal–organic chemical vapor deposition.The analysis suggests that a big proportion of Mn3+changing into Mn2+will reduce the exchange interaction and magnetic correlation of Mn atoms and lead to the reduction of ferromagnetism of material. 展开更多
关键词 GAMNN vacancy defect FERROMAGNETISM first-principles calculation MOCVD
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