In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on t...In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on the n-＋-InGaN contact layer by metal organic chemical vapor deposition（MOCVD） using H2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency（98%）,low resistivity（510 -4 Ω·cm）,and an epitaxial-like excellent interface on p-GaN with an n＋-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL（LED-Ⅲ）,and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer（LED-Ⅱ）,respectively.The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61204091,61404177,51402366,and U1201254)the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015B010132006)
文摘In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on the n-＋-InGaN contact layer by metal organic chemical vapor deposition（MOCVD） using H2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency（98%）,low resistivity（510 -4 Ω·cm）,and an epitaxial-like excellent interface on p-GaN with an n＋-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL（LED-Ⅲ）,and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer（LED-Ⅱ）,respectively.The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.
