Wafer-scale flexible surface acoustic wave(SAW)devices based on AlN/silicon structure are demonstrated.The final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvatur...Wafer-scale flexible surface acoustic wave(SAW)devices based on AlN/silicon structure are demonstrated.The final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvature radius of 8 mm.Measurements under free and bending conditions are carried out,showing that the central frequency shifts little as the curvature changes.SAW devices with central frequency about 191.9 MHz and Q-factor up to 600 are obtained.The flexible technology proposed is directly applied to the wafer silicon substrate in the last step,providing the potential of high performance flexible wafer-scale devices by direct integration with mature CMOS and MEMS technology.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61025021,60936002,and 61020106006the National Key Project of Science and Technology(2011ZX02403-002).
文摘Wafer-scale flexible surface acoustic wave(SAW)devices based on AlN/silicon structure are demonstrated.The final fabricated devices with a 50μm-thickness silicon wafer exhibit good flexibility with a bending curvature radius of 8 mm.Measurements under free and bending conditions are carried out,showing that the central frequency shifts little as the curvature changes.SAW devices with central frequency about 191.9 MHz and Q-factor up to 600 are obtained.The flexible technology proposed is directly applied to the wafer silicon substrate in the last step,providing the potential of high performance flexible wafer-scale devices by direct integration with mature CMOS and MEMS technology.
