Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s...Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s Si） nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended s SOI nanomembrane will be an important material for future novel high-performance devices.展开更多
We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn th...We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.展开更多
Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors ...Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61376117 and 61107025)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LY13F040004)
文摘Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s Si） nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended s SOI nanomembrane will be an important material for future novel high-performance devices.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51672171 and 61604094the Natural Science Foundation of Shanghai under Grant No 14ZR1418300+2 种基金the National Key Basic Research Program of China under Grant No 2015CB921600the Eastern Scholar Program from the Shanghai Municipal Education Commissionthe Fok Ying Tung Education Foundation
文摘We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61306126,61306127 and 61106015the Science and Technology Commission of Shanghai Municipality under Grant Nos 12ZR1453000,12ZR1453100 and 12ZR1436300CAS International Collaboration and Innovation Program on High Mobility Materials Engineering.
文摘Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.
