We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths(865 nm,905 nm and 1064 nm) and two working modes(pulse and single).The preparation technology of the diode includes two ...We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths(865 nm,905 nm and 1064 nm) and two working modes(pulse and single).The preparation technology of the diode includes two key processes:heat-sink and packaging processing technique to package four different chips on a same heat-sink.The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.展开更多
基金supported by the Strategic Talented Project Specialized Foundation of the General Armament Ministry(No.ZZ[2013]714)
文摘We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths(865 nm,905 nm and 1064 nm) and two working modes(pulse and single).The preparation technology of the diode includes two key processes:heat-sink and packaging processing technique to package four different chips on a same heat-sink.The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.