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Manipulation of band gap in 1T-TiSe_(2) via rubidium deposition
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作者 欧仪 陈磊 +6 位作者 信子鸣 任宇靖 袁鹏浩 王政国 朱玉 陈景芝 张焱 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第8期102-106,共5页
The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promisi... The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promising candidate for realizing excitonic condensation.Here,we studied the band gap in 1T-TiSe_(2) using angle-resolved photoemission spectroscopy(ARPES).Instead of only focusing on the in-plane band dispersions,we obtained the detailed band dispersions of both conduction and valance bands along the out-of-plane direction.We found that the conduction and valance bands split into multiple sub-bands in the CDW state due to band folding.As a result,the band gap between the Ti d-bands and Se p-bands reduces to~25 meV and becomes a direct gap in the CDW state.More intriguingly,such band gap can be further reduced by the rubidium deposition.The band structure becomes semimetallic in the rubidium-doped sample.Meanwhile,exotic gapless behaviors were observed at the p-d band crossing.Our result characterized the band gap of 1T-TiSe_(2) in three-dimensional Brillouin zone with unpreceded precision.It also suggests a closing of band gap or a potential band inversion in 1T-TiSe_(2) driven by rubidium deposition. 展开更多
关键词 angle-resolved photoemission spectroscopy metal–insulator transition transition metal dichalcogenides
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