In this Letter, we have demonstrated significant electric field induced（EFI） optical rectification（OR） effects existing in the surface layers of germanium（Ge） and measured the distributions of EFI OR signals alo...In this Letter, we have demonstrated significant electric field induced（EFI） optical rectification（OR） effects existing in the surface layers of germanium（Ge） and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the twoe-order susceptibility components χ2 effTzzz∕χe2 effTeffective secondzxxfor Ge（001）, Ge（110）, and Ge（111） surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61474055 and 60976043)the National 863 Program of China(No.2009AA03Z419)
文摘In this Letter, we have demonstrated significant electric field induced（EFI） optical rectification（OR） effects existing in the surface layers of germanium（Ge） and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the twoe-order susceptibility components χ2 effTzzz∕χe2 effTeffective secondzxxfor Ge（001）, Ge（110）, and Ge（111） surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.
