基于密度泛函理论(DFT)设计了一种新型的由4个咔唑组成的类芴风车格(GZP)的有机半导体材料,研究了其结构特点及热力学和电子性质.结果表明,GZP分为船式和椅式2种构象,且船式构象GZP1(0 k J/mol)比椅式构象GZP2(122.88 k J/mol)稳定;GZP...基于密度泛函理论(DFT)设计了一种新型的由4个咔唑组成的类芴风车格(GZP)的有机半导体材料,研究了其结构特点及热力学和电子性质.结果表明,GZP分为船式和椅式2种构象,且船式构象GZP1(0 k J/mol)比椅式构象GZP2(122.88 k J/mol)稳定;GZP1构象的内孔径为0.298 nm,外孔径为1.079 nm;GZP1的内重组能非常低,空穴和电子重组能分别为0.089和0.106 e V,可作为潜在的电荷传输材料.展开更多
基金supported by the National Natural Science Foundation of China(U1301243,2150314,21602111)Doctoral Fund of Ministry of Education of China(20133223110007)+5 种基金Natural Science Foundation of Jiangsu Province of China(BM2012010,BK20150832)Program for Postgraduates Research Innovation in University of Jiangsu Province,China(CXZZ13_0470)Nanjing University of Post and Telecommunications,China(NY214176,NY215172,NY217082,2016XSG03)Synergetic Innovation Center for Organic Electronics and Information DisplaysExcellent Science and Technology Innovation Team of Jiangsu Higher Education Institutions,China(2013)the Priority Academic Program Development of Jiangsu Higher Education Institutions~~
文摘基于密度泛函理论(DFT)设计了一种新型的由4个咔唑组成的类芴风车格(GZP)的有机半导体材料,研究了其结构特点及热力学和电子性质.结果表明,GZP分为船式和椅式2种构象,且船式构象GZP1(0 k J/mol)比椅式构象GZP2(122.88 k J/mol)稳定;GZP1构象的内孔径为0.298 nm,外孔径为1.079 nm;GZP1的内重组能非常低,空穴和电子重组能分别为0.089和0.106 e V,可作为潜在的电荷传输材料.