The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capaci...The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.展开更多
A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to ...A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176095 and 61404169)the Youth Innovation Promotion Association of Chinese Academy of Sciences
文摘The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.
文摘A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.
