Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO mi...Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained,which is well in accordance with x-ray diffraction analysis.The obtained ZnO microrods have uniform lengths of about 2µm and side lengths of about 100 nm.As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K.The acceptor binding energy is estimated to be 128 meV.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.10804040,61076104 and 11004092the Doctoral Scientific Research Starting Foundation of Liaoning Province(No.20081081)。
文摘Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained,which is well in accordance with x-ray diffraction analysis.The obtained ZnO microrods have uniform lengths of about 2µm and side lengths of about 100 nm.As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K.The acceptor binding energy is estimated to be 128 meV.
文摘采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.
