本文首次提出全新的管理概念——管要讲理(Managing According to Reason,简称MR)。管是指领导、计划、组织和控制,理是指被管客观事物的发展规律。管理新概念是管和理两大要素的集成。新的管理(MR)科学研究对象是管和理之间的矛盾关系...本文首次提出全新的管理概念——管要讲理(Managing According to Reason,简称MR)。管是指领导、计划、组织和控制,理是指被管客观事物的发展规律。管理新概念是管和理两大要素的集成。新的管理(MR)科学研究对象是管和理之间的矛盾关系及其发展变化的客观规律。新的管理(MR)科学是传统的管理学和哲学、自然科学、工程技术科学和人文社会科学的大集成。笔者认为,管要依靠权力,理要依靠科学,新的管理(MR)是权力和科学两大要素的集成,权力是管理(MR)的保证,科学是管理(MR)的根据,两者不能缺一,21世纪是新的管理(MR)世纪。展开更多
Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an...Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.展开更多
文摘本文首次提出全新的管理概念——管要讲理(Managing According to Reason,简称MR)。管是指领导、计划、组织和控制,理是指被管客观事物的发展规律。管理新概念是管和理两大要素的集成。新的管理(MR)科学研究对象是管和理之间的矛盾关系及其发展变化的客观规律。新的管理(MR)科学是传统的管理学和哲学、自然科学、工程技术科学和人文社会科学的大集成。笔者认为,管要依靠权力,理要依靠科学,新的管理(MR)是权力和科学两大要素的集成,权力是管理(MR)的保证,科学是管理(MR)的根据,两者不能缺一,21世纪是新的管理(MR)世纪。
文摘Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.