The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer ...The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.展开更多
An overall analysis of the trench superjunction insulated gate bipolar transistor（SJ IGBT） is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sent...An overall analysis of the trench superjunction insulated gate bipolar transistor（SJ IGBT） is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TC AD.More specifically,simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V.Atthe same time,the turn-off loss is decreased by 50%.The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.展开更多
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.
基金supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘An overall analysis of the trench superjunction insulated gate bipolar transistor（SJ IGBT） is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TC AD.More specifically,simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V.Atthe same time,the turn-off loss is decreased by 50%.The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.
