A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojun...A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga N.At the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)path.Because of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance.Compared with the conventional HEMT(Conv.HEMT),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same time.The DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the Conv.HEMT at VGS=0 V and-1 V,respectively.In addition,the forward conduction capability and blocking characteristics almost remain unchanged.In the end,the key fabrication flows of DCRC-HEMT are presented.展开更多
基金the National Natural Science Foundations of China(Grant Nos.61874149 and U20A20208)the Outstanding Youth Science and Technology Foundation of China(Grant No.2018-JCJQ-ZQ-060)。
文摘A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga N.At the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)path.Because of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance.Compared with the conventional HEMT(Conv.HEMT),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same time.The DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the Conv.HEMT at VGS=0 V and-1 V,respectively.In addition,the forward conduction capability and blocking characteristics almost remain unchanged.In the end,the key fabrication flows of DCRC-HEMT are presented.
