This paper presents an overview of the growth of Bi2Se3, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between the growth of Bi2 Se3 （111...This paper presents an overview of the growth of Bi2Se3, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between the growth of Bi2 Se3 （111） on van der Waals （vdW） and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi2Se3 on InP （001） and GaAs （001） substrates is also discussed.展开更多
2H-and 1T′-phase monolayer MoTe2 films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy（STM/STS）.The phase transition of MoTe2 can be controlled by a postgrowth...2H-and 1T′-phase monolayer MoTe2 films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy（STM/STS）.The phase transition of MoTe2 can be controlled by a postgrowth annealing process,and the intermediate state during the phase transition is directly observed by STM.For 2H-MoTe2,inversion domain boundaries are presented as bright lines at high sample bias,but as dark lines at lower sample bias.The dI/dV mappings reveal the distinct distributions of electronic states between domain boundaries and interiors of domains.It sihould be noted that a 2×2 periodic structure is clearlfy discernable inside the domains,where the STS measurement shows a small dip of size～150 meV at the vicinity of the Fermi level,indicating that the 2×2 periodic structure may be an incommensurate charge density wave.Moreover,a4×4 periodic structure appears in 2H-MoTe2 grown at a higher substrate temperature.展开更多
基金supported by the Research Grant Council (RGC) of Hong Kong Special Administrative Region for its financial support under the General Research Funds (Grant Nos. 706110 and 706111)the SRFDP and RGCERG Joint Research Scheme sponsored by the RGC of Hong Kong and the Ministry of Education of China (M-HKU709/l2)
文摘This paper presents an overview of the growth of Bi2Se3, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between the growth of Bi2 Se3 （111） on van der Waals （vdW） and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi2Se3 on InP （001） and GaAs （001） substrates is also discussed.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFA0301003 and 2016YFA0300403the National Natural Science Foundation of China under Grant Nos 11521404,11634009,U1632102,11504230,11674222,11574202,11674226,11574201 and U1632272
文摘2H-and 1T′-phase monolayer MoTe2 films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy（STM/STS）.The phase transition of MoTe2 can be controlled by a postgrowth annealing process,and the intermediate state during the phase transition is directly observed by STM.For 2H-MoTe2,inversion domain boundaries are presented as bright lines at high sample bias,but as dark lines at lower sample bias.The dI/dV mappings reveal the distinct distributions of electronic states between domain boundaries and interiors of domains.It sihould be noted that a 2×2 periodic structure is clearlfy discernable inside the domains,where the STS measurement shows a small dip of size～150 meV at the vicinity of the Fermi level,indicating that the 2×2 periodic structure may be an incommensurate charge density wave.Moreover,a4×4 periodic structure appears in 2H-MoTe2 grown at a higher substrate temperature.
