Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phono...Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phonon frequency.As a non-polar crystal,intrinsic bilayer graphene possesses little infrared response at its transverse optical phonon frequency.The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon.The activated phonon further interacts with continuum electronic transitions,and generates a strong Fano resonance.The resulted Fano resonance features a very sharp near-field infrared scattering peak,which leads to an extraordinary sensitivity of-0.002%for the strain detection.Our results demonstrate the first nano-scale near-field Fano resonance,provide a new way to probe local strains with high sensitivity in non-polar crystals,and open exciting possibilities for studying strain-induced rich phenomena.展开更多
As a typical two-dimensional(2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of seco...As a typical two-dimensional(2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of secondary electron emission suppression remain controversial. Since traditional models rely on the data of experimental bulk properties which are scarcely appropriate to the 2D coating situation, this paper presents the first-principles-based numerical calculations of the electron interaction and emission process for monolayer and multilayer graphene on silicon(111) substrate. By using the anisotropic energy loss for the coating graphene, the electron transport process can be described more realistically. The real physical electron interactions, including the elastic scattering of electron-nucleus, inelastic scattering of the electron-extranuclear electron, and electron-phonon effect, are considered and calculated by using the Monte Carlo method. The energy level transition theory-based first-principles method and the full Penn algorithm are used to calculate the energy loss function during the inelastic scattering. Variations of the energy loss function and interface electron density differences for 1 to 4 layer graphene coating Go Si are calculated, and their inner electron distributions and secondary electron emissions are analyzed. Simulation results demonstrate that the dominant factor of the inhibiting of secondary electron yield(SEY) of Go Si is to induce the deeper electrons in the internal scattering process. In contrast, a low surface potential barrier due to the positive deviation of electron density difference at monolayer Go Si interface in turn weakens the suppression of secondary electron emission of the graphene layer. Only when the graphene layer number is 3, does the contribution of surface work function to the secondary electron emission suppression appear to be slightly positive.展开更多
基金Supported by the National Key Research and Development Program of China (Grant No.2016YFA0302001)the National Natural Science Foundation of China (Grant Nos.11774224,12074244,11521404,and 61701394)+1 种基金support from the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learningadditional support from a Shanghai talent program。
文摘Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phonon frequency.As a non-polar crystal,intrinsic bilayer graphene possesses little infrared response at its transverse optical phonon frequency.The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon.The activated phonon further interacts with continuum electronic transitions,and generates a strong Fano resonance.The resulted Fano resonance features a very sharp near-field infrared scattering peak,which leads to an extraordinary sensitivity of-0.002%for the strain detection.Our results demonstrate the first nano-scale near-field Fano resonance,provide a new way to probe local strains with high sensitivity in non-polar crystals,and open exciting possibilities for studying strain-induced rich phenomena.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61901360 and 12175176)the Natural Science Foundation of Shaanxi Province, China (Grant No. 2020JQ-644)the Scientific Research Projects of the Shaanxi Education Department, China (Grant No. 20JK0808)。
文摘As a typical two-dimensional(2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of secondary electron emission suppression remain controversial. Since traditional models rely on the data of experimental bulk properties which are scarcely appropriate to the 2D coating situation, this paper presents the first-principles-based numerical calculations of the electron interaction and emission process for monolayer and multilayer graphene on silicon(111) substrate. By using the anisotropic energy loss for the coating graphene, the electron transport process can be described more realistically. The real physical electron interactions, including the elastic scattering of electron-nucleus, inelastic scattering of the electron-extranuclear electron, and electron-phonon effect, are considered and calculated by using the Monte Carlo method. The energy level transition theory-based first-principles method and the full Penn algorithm are used to calculate the energy loss function during the inelastic scattering. Variations of the energy loss function and interface electron density differences for 1 to 4 layer graphene coating Go Si are calculated, and their inner electron distributions and secondary electron emissions are analyzed. Simulation results demonstrate that the dominant factor of the inhibiting of secondary electron yield(SEY) of Go Si is to induce the deeper electrons in the internal scattering process. In contrast, a low surface potential barrier due to the positive deviation of electron density difference at monolayer Go Si interface in turn weakens the suppression of secondary electron emission of the graphene layer. Only when the graphene layer number is 3, does the contribution of surface work function to the secondary electron emission suppression appear to be slightly positive.
