白酒酿造过程中淀粉凝胶特性的变化研究

为了解酿酒原料在酿造过程中淀粉的变化,分别以高粱、大米为原料,采取小曲白酒工艺进行多轮次发酵,分别测定了不同发酵时期酒醅中的含水量、酸度及淀粉含量,并对其淀粉的凝胶特性进行了对比分析。结果表明,随着发酵的进行,大米、高粱酒醅的含水量增加,酸度和淀粉含量下降。在发酵天数相同、发酵温度不同的条件下,大米和高粱的溶解度和膨润力都随温度的增加而增加。此外,不同发酵天数下的大米和高粱酒醅在相同温度下,溶解度和膨润力均随酒醅发酵天数的增加而降低,其凝胶特性也与溶解度和膨润力呈正相关。通过对酿造过程中淀粉变化情况的研究,能够进一步推动白酒的高效率、高品质生产,具有一定的指导意义和经济价值。

山地城市绿色交通规划实施路径与发展策略研究——以贵阳市为例

山地城市生态条件良好,构建高效节能、减排低碳的绿色交通体系,对强化山地城市生态优势,打造绿色低碳生态文明城市具有重要作用。随着社会经济的快速发展,发展“绿色交通”已经成为城市可持续发展的重要途径。文章以贵阳市为例,探析了山地城市在绿色交通发展中的诉求和导向要求,并提出了山地城市绿色交通规划实施路径和发展策略。

雪梨——青瓜复合米酒的工艺研究

探讨雪梨——青瓜复合米酒的制作方法,并优化其工艺条件。以雪梨、青瓜、糯米为原料,在单因素实验的基础上通过正交试验得到复合米酒最佳发酵工艺。结果表明:在果粒添加量10%,接种量0.5%,发酵时间48h及发酵温度28℃条件下可获得色泽鲜亮透明、甜味适中、果香与酒香和谐的复合米酒。雪梨-青瓜复合米酒有很高的营养价值,研究可为复合米酒的开发提供参考依据。

六朝至唐碑刻“墓石”义词语组合与聚合关系研究

组合与聚合关系最早用于分析语法现象,后涉及语言的各个层级。汉语词汇系统的发展和演变表现出明显的组合与聚合规则。收集了六朝至唐碑刻"墓石"义词语76组,其构词语素体现出不同的组合能力,语素义明确而具体。处于同一聚合群中的"墓石"义词语,其理性意义大致相同,感性意义对立而统一。"墓石"义词语所体现的组合、聚合方面的特点及规律,既受到语言词汇系统内部的影响,又有来自语言使用与表达、碑铭文体等方面的制约,对于汉语词汇史研究有重要意义。

唐《□士华墓志》录文辑校考辨--兼论碑刻文献辑校方法

唐代碑刻文字众体兼具,讹俗满目,给文字释读带来很大困难。唐《□士华墓志》兼杂篆、隶、楷多种字体,个别文字形变怪异,加之各家所据拓片完整和清晰程度不一,其录文质量参差不齐,文字缺误问题较严重。依据精善拓本,辑合校勘并补正已有录文中的文字缺误凡16例。提高碑刻文字释读准确度的方法大致有五:注意利用不同版本的拓片;注意区分同形字;注意利用碑志文字讹混通例;注意考证人物典制;注意利用碑志行文体例。

贵州最早的铁索桥

盘江铁索桥,是我省最早的铁索桥,位于今滇黔路关岭与晴隆交界处。这座铁索桥,是明末安普(今睛隆、普安)监军副使朱家民于1626年(天启六年)平息安邦彦之乱后,动员民众捐款,于1628开工、至1631年建成。它用总长数百丈的三十六根大铁索,穿于两岸岩石上,再在底索上如四川栈道那样铺以木板。黄汉铭题诗:”不借风帆不系船,横江铁索利无边。朱公酝酿成斯举,履险如夷济大川。是其写照。一六五八年,为抗清兵,其桥被李定国所毁。次年,总督赵廷臣为恢复此桥,又奏请拨银一千五百两,将留存的七根桥索加至十根,铺上木板,暂作通行。由于摇晃不便。

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.

当好科技特派员 为农村科技服务作贡献

2007年是我具有重要意义的一年，因为在这一年我作为桐梓县6名各批科技特派员中的唯一的农民科技特派员，荣幸地参加了贵州省2007年科技特派员培训班，同时加入了全国科普自愿者的行业，至此我对我所热爱的工作更加富有信心和热情。作为一名农村科技特派员，如何为农村科技服务作贡献是我的职责，充分认识科技服务推广与创新在社会主义新农村建设中的支撑和引领作用，

我相信，我努力，我可以

我一直处在迷茫之中，现实来得太快，在我还没有准备好的时候，高中校园已经向我敞开了大门，迎接我的到来!迷茫的高一啊!我如同一个迷路的小孩，不知所措，应该做点什么？这一切的—切都在等着我去完成!

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechanism is investigated.The proposed LDMOS features an accumulation-mode extended gate（AG） and back-side etching（BE）. The extended gate consists of a P– region and two diodes in series. In the on-state with VGD〉 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The R_on,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the R_on,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping（VLD） and the ＂hot-spot＂ caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the R_on,sp by 70.2% and increases the BV from 776 V to 818 V.

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.

宁夏和重庆两地农村儿童多部位蛲虫感染情况调查

目的:了解宁夏和重庆两地农村儿童蛲虫多部位感染情况,为降低和控制蛲虫感染率,制定实用可操作的防治对策提供科学依据。方法采用透明胶纸法采集受检者肛门标本;棉拭子法分别采集鼻孔、耳孔标本;指甲刀法采集指甲标本。饱扣盐水浮聚法制片,光学显微镜下镜检。结果在1000名12岁以下受检儿童中,两地儿童蛲虫按部位总感染率依次为肛门22.00%、耳孔3.40%、鼻孔1.80%、指甲9.20%,重庆依次为肛门12.60%、耳孔2.20%、鼻孔0.40%、指甲3.80%;宁夏依次为肛门9.40%、耳孔1.20%、鼻孔1.40%、指甲5.40%。蛲虫总感染率:宁夏>重庆;民族儿童感染率:回族>土家族>汉族;肛门、鼻孔感染率:女>男;耳孔、指甲感染率:男>女。不同年龄组中,6~12岁为感染高峰。结论蛲虫感染率的高低与儿童所处环境的卫生状况,儿童卫生习惯及家长卫生观念、职业等密切相关。建议学校、家长提高防病意识,加强卫生宣教,扩大枸橼酸哌嗪治疗范围,切实控制蛲虫感染,保护儿童心身健康。

A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.

在主战场上兴武强兵——山东省栖霞市人武部谋求武装工作与经济建设“双赢”纪实

栖霞,因“五更平明,海日东升,照耀城头,霞光万道”而得名。出产的“栖霞苹果”驰名中外,有“中国苹果之都”的美誉。近年来,栖霞市人武部紧跟形势、面向市场用兵练兵,逐步形成了地方经济高速推进,武装工作跨越发展的“双赢”局面。最近,山东省军区、烟台警备区主要领导对他们的工作给予了充分肯定。