A novelμc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition(photo-CVD)system.The films contain of two phases with the microcrystallites embedded in amorphous ...A novelμc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition(photo-CVD)system.The films contain of two phases with the microcrystallites embedded in amorphous materials.The films contain the crystallites with volume of fraction of 0.17-0.23 and average grain size of 32-85nm.The conductivity up to 16(Ω.cm)^(-1) and gauge factor(GF)of about 12 are obtained.展开更多
Diamond thin films are deposited on mirror-polished Si substrates using microwave plasma chemical vapour deposition (MPCVD), wherein, the substrates were first treated fornucleation by DC bias-enhanced MPCVD, and diam...Diamond thin films are deposited on mirror-polished Si substrates using microwave plasma chemical vapour deposition (MPCVD), wherein, the substrates were first treated fornucleation by DC bias-enhanced MPCVD, and diamond nucleation density as high as 1010 cm-2 has been achieved. Under the same density of nucleation, the relationships between optical transmittance and deposition parameters such as methane concentration (n), substrate temperature (T) and gas pressure (P) are established. The results show that the transmittance strongly depends on the methane concentration and substrate temperature, but hardly depends on the gas pressure. With the parameters of n = 0.7 %, T = 840℃and P =20 Torr, a highest transmittance at visible light (λ= 600 nm) reaches to 64.5 %, which is very close to the theoretical transmission limit of diamond film.展开更多
文摘A novelμc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition(photo-CVD)system.The films contain of two phases with the microcrystallites embedded in amorphous materials.The films contain the crystallites with volume of fraction of 0.17-0.23 and average grain size of 32-85nm.The conductivity up to 16(Ω.cm)^(-1) and gauge factor(GF)of about 12 are obtained.
文摘Diamond thin films are deposited on mirror-polished Si substrates using microwave plasma chemical vapour deposition (MPCVD), wherein, the substrates were first treated fornucleation by DC bias-enhanced MPCVD, and diamond nucleation density as high as 1010 cm-2 has been achieved. Under the same density of nucleation, the relationships between optical transmittance and deposition parameters such as methane concentration (n), substrate temperature (T) and gas pressure (P) are established. The results show that the transmittance strongly depends on the methane concentration and substrate temperature, but hardly depends on the gas pressure. With the parameters of n = 0.7 %, T = 840℃and P =20 Torr, a highest transmittance at visible light (λ= 600 nm) reaches to 64.5 %, which is very close to the theoretical transmission limit of diamond film.
