Metal ions doping is a typical approach for tuning sensing properties of metal oxide semiconductors based gas sensors.Herein,hierarchical flower-like pure and In-doped Co_(3)O_(4) nanostructures assembled by porous tw...Metal ions doping is a typical approach for tuning sensing properties of metal oxide semiconductors based gas sensors.Herein,hierarchical flower-like pure and In-doped Co_(3)O_(4) nanostructures assembled by porous two-dimensional(2D)nanosheets are synthesized via a solvothermal method and annealing process.The sensing measurements display that the In@Co_(3)O_(4)-4 based sensor possesses high response value of 55.9 toward 100 ppm xylene at 150 ℃,which is nearly 3.8times larger than that of pure Co_(3)O_(4) sensor.Furthermore,it possesses good selectivity and anti-humidity properties.Combined with the results of DFT calculations,the mechanism of enhanced gas sensing performance is analyzed systematically.展开更多
文摘Metal ions doping is a typical approach for tuning sensing properties of metal oxide semiconductors based gas sensors.Herein,hierarchical flower-like pure and In-doped Co_(3)O_(4) nanostructures assembled by porous two-dimensional(2D)nanosheets are synthesized via a solvothermal method and annealing process.The sensing measurements display that the In@Co_(3)O_(4)-4 based sensor possesses high response value of 55.9 toward 100 ppm xylene at 150 ℃,which is nearly 3.8times larger than that of pure Co_(3)O_(4) sensor.Furthermore,it possesses good selectivity and anti-humidity properties.Combined with the results of DFT calculations,the mechanism of enhanced gas sensing performance is analyzed systematically.
