InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topog...InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3＂（002） full width at half maximum （FWHM） of rocking curve,313.5＂（102） FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×10~8 cm^（-2）,were better than that of the InAlN epilayer grown on the GaN template,309.3＂,339.1＂,0.593 nm and 4.2×10~8 cm^（-2）.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.展开更多
基金Project supported by the National Natural Science Foundation of China(No.60806001)the National High Technology Research and Development Program of China(No.2011AA03A103)the National Basic Research Program of China(No.2011CB301904)
文摘InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3＂（002） full width at half maximum （FWHM） of rocking curve,313.5＂（102） FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×10~8 cm^（-2）,were better than that of the InAlN epilayer grown on the GaN template,309.3＂,339.1＂,0.593 nm and 4.2×10~8 cm^（-2）.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.
